3C–SiC Heteroepitaxial Growth by Vapor–Liquid–Solid Mechanism on Patterned 4H–SiC Substrate Using Si–Ge Melt

In this work, we report on the use of patterned 4H–SiC(0001) substrates for the heteroepitaxial growth of 3C–SiC by vapor–liquid–solid (VLS) mechanism using Ge50Si50 melt. Mesas structures of various size and shape were obtained by standard photolithography and dry etching processes. On the temperat...

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Bibliographic Details
Published in:Crystal growth & design 2011-06, Vol.11 (6), p.2177-2182
Main Authors: Lorenzzi, J, Lazar, M, Tournier, D, Jegenyes, N, Carole, D, Cauwet, F, Ferro, G
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Defects and impurities in crystals
microstructure
Electronics
Engineering Sciences
Exact sciences and technology
Grain and twin boundaries
Materials science
Methods of crystal growth
physics of crystal growth
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Structure of solids and liquids
crystallography
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
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Summary:In this work, we report on the use of patterned 4H–SiC(0001) substrates for the heteroepitaxial growth of 3C–SiC by vapor–liquid–solid (VLS) mechanism using Ge50Si50 melt. Mesas structures of various size and shape were obtained by standard photolithography and dry etching processes. On the temperature range investigated 1300–1450 °C, 3C–SiC deposit was obtained on top and outside the mesas. Some lateral enlargement of these mesas was observed, but it was systematically homoepitaxial. The lateral growth rate was found rather low compared to other techniques like chemical vapor deposition, with a maximum value of ∼12 μm/h. In addition, elimination of twin boundaries (TBs) inside the 3C–SiC deposit on top of the mesas was observed in the temperature range of 1400–1450 °C and for specific mesa shape or orientation of the sidewalls. The best case for eliminating these TBs was found to be with initially circular mesas, which spontaneously form well orientated hexagonal facets and then lead to TB-free deposit on top after VLS growth.
ISSN:1528-7483
1528-7505
DOI:10.1021/cg101487g