Low temperature plasma deposition of silicon thin films: From amorphous to crystalline

• Published in: Journal of non-crystalline solids 2012-09, Vol.358 (17), p.2000-2003
• Main Authors: Roca i Cabarrocas, P., Cariou, R., Labrune, M.
• Format: Article
• Language: English
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed Matter; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Low temperature epitaxy; Materials Science; Methods of deposition of films and coatings; film growth and epitaxy; Methods of nanofabrication; Nanocrystalline materials; Nanoscale materials and structures: fabrication and characterization; PECVD; Physics; Silicon; Silicon nanocrystals; Substrate selectivity; Theory and models of film growth
• ISSN: 0022-3093; 1873-4812
• DOI: 10.1016/j.jnoncrysol.2011.12.113

We report on the epitaxial growth of crystalline silicon films on (100) oriented crystalline silicon substrates by standard plasma enhanced chemical vapor deposition at 175°C. Such unexpected epitaxial growth is discussed in the context of deposition processes of silicon thin films, based on silicon radicals and nanocrystals. Our results are supported by previous studies on plasma synthesis of silicon nanocrystals and point toward silicon nanocrystals being the most plausible building blocks for such epitaxial growth. The results lay the basis of a new approach for the obtaining of crystalline silicon thin films and open the path for transferring those epitaxial layers from c-Si wafers to low cost foreign substrates. ► Epitaxial growth of crystalline silicon on (100) oriented crystalline silicon substrates. ► Silicon nanocrystals are the most plausible building blocks for epitaxial growth. ► The results open the path for transferring epitaxial to low cost foreign substrates.