GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth

We introduce GaN/InGaN light emitting diodes with a dielectric photonic crystal embedded in the epitaxial layer by lateral epitaxial overgrowth on a patterned GaN template. Overgrowth, coalescence, and epitaxial growth of the pn junction within a thickness of 500 nm is obtained using metal-organic c...

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Bibliographic Details
Published in:Applied physics letters 2008-03, Vol.92 (11)
Main Authors: David, Aurélien, Moran, B., Mcgroddy, K., Matioli, E., Hu, E.L., Denbaars, S., Nakamura, S., Weisbuch, Claude
Format: Article
Language:English
Subjects:
Optics
Physics
Online Access:Get full text
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Summary:We introduce GaN/InGaN light emitting diodes with a dielectric photonic crystal embedded in the epitaxial layer by lateral epitaxial overgrowth on a patterned GaN template. Overgrowth, coalescence, and epitaxial growth of the pn junction within a thickness of 500 nm is obtained using metal-organic chemical vapor deposition. This design strongly modifies the distribution of guided modes, as confirmed by angle-resolved measurements. The regime of operation and potential efficiency of such structures are discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2898513