GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth

We introduce GaN/InGaN light emitting diodes with a dielectric photonic crystal embedded in the epitaxial layer by lateral epitaxial overgrowth on a patterned GaN template. Overgrowth, coalescence, and epitaxial growth of the pn junction within a thickness of 500 nm is obtained using metal-organic c...

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Published in:Applied physics letters 2008-03, Vol.92 (11)
Main Authors: David, Aurélien, Moran, B., Mcgroddy, K., Matioli, E., Hu, E.L., Denbaars, S., Nakamura, S., Weisbuch, Claude
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Language:English
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Optics
Physics
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container_issue 11
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container_title Applied physics letters
container_volume 92
creator David, Aurélien
Moran, B.
Mcgroddy, K.
Matioli, E.
Hu, E.L.
Denbaars, S.
Nakamura, S.
Weisbuch, Claude
description We introduce GaN/InGaN light emitting diodes with a dielectric photonic crystal embedded in the epitaxial layer by lateral epitaxial overgrowth on a patterned GaN template. Overgrowth, coalescence, and epitaxial growth of the pn junction within a thickness of 500 nm is obtained using metal-organic chemical vapor deposition. This design strongly modifies the distribution of guided modes, as confirmed by angle-resolved measurements. The regime of operation and potential efficiency of such structures are discussed.
doi_str_mv 10.1063/1.2898513
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subjects Optics
Physics
title GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth
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