Raman spectrum of Si nanowires: temperature and phonon confinement effects

• Published in: Applied physics. A, Materials science & processing Materials science & processing, 2014-03, Vol.114 (4), p.1321-1331
• Main Authors: Anaya, J., Torres, A., Hortelano, V., Jiménez, J., Prieto, A. C., Rodríguez, A., Rodríguez, T., Rogel, R., Pichon, L.
• Format: Article
• Language: English
• Subjects: Characterization and Evaluation of Materials; Condensed Matter Physics; Confinement; Engineering Sciences; Heating; Laser beams; Machines; Manufacturing; Micro and nanotechnologies; Microelectronics; Nanotechnology; Nanowires; Optical and Electronic Materials; Phonons; Physics; Physics and Astronomy; Processes; Recognition; Shape recognition; Silicon; Surfaces and Interfaces; Thin Films
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-013-7966-y

The Raman spectrum of Si nanowires (NWs) is a matter of controversy. Usually, the one-phonon band appears broadened and shifted. This behaviour is interpreted in terms of phonon confinement; however, similar effects are observed for NWs with dimensions for which phonon confinement does not play any relevant role. In this context, the temperature increase induced by the laser beam is recognized to play a capital role in the shape of the spectrum. The analysis of the Raman spectrum, under the influence of the heating induced by the laser beam, is strongly dependent on the excitation conditions and the properties of the NWs. We present herein an analysis of the Raman spectrum of Si NWs based on a study of the interaction between the laser beam and the NWs, for both ensembles of NWs and individual NWs, taking account of the temperature increase in the NWs under the focused laser beam and the dimensions of the NWs.