In situ Raman monitoring of He2+ irradiation induced damage in a UO2 ceramic

The in situ Raman probing of a UO2 ceramic in [Ar/H2, 95/5] gas atmosphere followed by exposure to He2+ ionic irradiation coming from a cyclotron accelerator was implemented. It was observed that the growth of Raman defect bands exhibits a unique kinetic nicely modelized by a simple direct impact mo...

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Bibliographic Details
Published in:Applied physics letters 2013-07, Vol.103 (4)
Main Authors: Guimbretière, G., Desgranges, L., Canizarès, A., Caraballo, R., Duval, F., Raimboux, N., Omnée, R., Ammar, M. R., Jégou, C., Simon, P.
Format: Article
Language:English
Subjects:
Chemical Sciences
Material chemistry
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Summary:The in situ Raman probing of a UO2 ceramic in [Ar/H2, 95/5] gas atmosphere followed by exposure to He2+ ionic irradiation coming from a cyclotron accelerator was implemented. It was observed that the growth of Raman defect bands exhibits a unique kinetic nicely modelized by a simple direct impact model, and with an annealing rate constant of 5.6 × 10−4 ± 4 × 10−5 s−1 for an ionic flow of 50 nA and an ions-beam induced sample heating of 170 ± 10 °C. Also, it was observed that the Ar plasma induced by the ions-beam is a sensitive probe of the presence of the ions-beam.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4816285