Two-phonon process and hyperfine interaction limiting slow hole-spin relaxation time in InAs/GaAs quantum dots

We study the hole-spin relaxation in p-doped InAs quantum dots. Two relaxation mechanisms are evidenced, at low magnetic field (0 < or = B < or = 2T) and low temperature (2 < or = T < or = 50K), by using a pump-probe configuration and a recent experimental technique working in the freque...

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2012-07, Vol.86 (4), Article 045306
Main Authors: Fras, F., Eble, B., Desfonds, P., Bernardot, F., Testelin, C., Chamarro, M., Miard, A., Lemaître, A.
Format: Article
Language:English
Subjects:
Approximation
Condensed matter
Constraining
Indium arsenides
Inhomogeneity
Magnetic fields
Physics
Quantum dots
Quantum Physics
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Summary:We study the hole-spin relaxation in p-doped InAs quantum dots. Two relaxation mechanisms are evidenced, at low magnetic field (0 < or = B < or = 2T) and low temperature (2 < or = T < or = 50K), by using a pump-probe configuration and a recent experimental technique working in the frequency domain. At T = 2K, the coupling to nuclear spins and the hole wave-function inhomogeneity fix the hole-spin relaxation rate value, (ProQuest: Formulae and/or non-USASCII text omitted) [approximate] 1 mu s super(-1). It decreases with increasing magnetic field and reaches a plateau at 0.4 mu s super(-1). At T >or = 7K, two-phonon spin-orbit process dominates and leads to a quadratic temperature dependence of (ProQuest: Formulae and/or non-USASCII text omitted) in good agreement with theory.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.86.045306