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Two-phonon process and hyperfine interaction limiting slow hole-spin relaxation time in InAs/GaAs quantum dots
We study the hole-spin relaxation in p-doped InAs quantum dots. Two relaxation mechanisms are evidenced, at low magnetic field (0 < or = B < or = 2T) and low temperature (2 < or = T < or = 50K), by using a pump-probe configuration and a recent experimental technique working in the freque...
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Published in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2012-07, Vol.86 (4), Article 045306 |
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container_title | Physical review. B, Condensed matter and materials physics |
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creator | Fras, F. Eble, B. Desfonds, P. Bernardot, F. Testelin, C. Chamarro, M. Miard, A. Lemaître, A. |
description | We study the hole-spin relaxation in p-doped InAs quantum dots. Two relaxation mechanisms are evidenced, at low magnetic field (0 < or = B < or = 2T) and low temperature (2 < or = T < or = 50K), by using a pump-probe configuration and a recent experimental technique working in the frequency domain. At T = 2K, the coupling to nuclear spins and the hole wave-function inhomogeneity fix the hole-spin relaxation rate value, (ProQuest: Formulae and/or non-USASCII text omitted) [approximate] 1 mu s super(-1). It decreases with increasing magnetic field and reaches a plateau at 0.4 mu s super(-1). At T >or = 7K, two-phonon spin-orbit process dominates and leads to a quadratic temperature dependence of (ProQuest: Formulae and/or non-USASCII text omitted) in good agreement with theory. |
doi_str_mv | 10.1103/PhysRevB.86.045306 |
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B, Condensed matter and materials physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fras, F.</au><au>Eble, B.</au><au>Desfonds, P.</au><au>Bernardot, F.</au><au>Testelin, C.</au><au>Chamarro, M.</au><au>Miard, A.</au><au>Lemaître, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Two-phonon process and hyperfine interaction limiting slow hole-spin relaxation time in InAs/GaAs quantum dots</atitle><jtitle>Physical review. B, Condensed matter and materials physics</jtitle><date>2012-07-09</date><risdate>2012</risdate><volume>86</volume><issue>4</issue><artnum>045306</artnum><issn>1098-0121</issn><eissn>1550-235X</eissn><abstract>We study the hole-spin relaxation in p-doped InAs quantum dots. Two relaxation mechanisms are evidenced, at low magnetic field (0 < or = B < or = 2T) and low temperature (2 < or = T < or = 50K), by using a pump-probe configuration and a recent experimental technique working in the frequency domain. At T = 2K, the coupling to nuclear spins and the hole wave-function inhomogeneity fix the hole-spin relaxation rate value, (ProQuest: Formulae and/or non-USASCII text omitted) [approximate] 1 mu s super(-1). It decreases with increasing magnetic field and reaches a plateau at 0.4 mu s super(-1). At T >or = 7K, two-phonon spin-orbit process dominates and leads to a quadratic temperature dependence of (ProQuest: Formulae and/or non-USASCII text omitted) in good agreement with theory.</abstract><pub>American Physical Society</pub><doi>10.1103/PhysRevB.86.045306</doi><orcidid>https://orcid.org/0000-0002-1604-8071</orcidid><orcidid>https://orcid.org/0000-0003-1892-9726</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | Approximation Condensed matter Constraining Indium arsenides Inhomogeneity Magnetic fields Physics Quantum dots Quantum Physics Texts |
title | Two-phonon process and hyperfine interaction limiting slow hole-spin relaxation time in InAs/GaAs quantum dots |
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