Electron and hole spin cooling efficiency in InAs quantum dots: The role of nuclear field

The spin dynamics of a resident carrier, hole or electron, in singly charged InAs/GaAs quantum dots has been measured by pump-probe experiments. The relative strength of the hole to the electron hyperfine couplings with nuclei is obtained by studying the magnetic-field dependence of the resident-car...

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Bibliographic Details
Published in:Applied physics letters 2010-04, Vol.96 (17)
Main Authors: Desfonds, P., Eble, B., Fras, F., Testelin, C., Bernardot, F., Chamarro, M., Urbaszek, B., Amand, T., Marie, X., Gérard, J. M., Thierry-Mieg, V., Miard, A., Lemaître, A.
Format: Article
Language:English
Subjects:
Physics
Quantum Physics
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Summary:The spin dynamics of a resident carrier, hole or electron, in singly charged InAs/GaAs quantum dots has been measured by pump-probe experiments. The relative strength of the hole to the electron hyperfine couplings with nuclei is obtained by studying the magnetic-field dependence of the resident-carrier spin polarization. We find, in good agreement with recent theoretical studies, that the hole hyperfine coupling is ten times smaller than the electron one.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3394010