XPS investigation of the interaction between ECR-excited hydrogen and the native oxide of GaAs (100)

The composition and the chemical element states of the native oxide of GaAs(100) during ECR-hydrogen cleaning have been investigated. It was found that carbon-containing impurities and arsenic oxide are removed from the surface at a substrate temperature equal to 150°C, while gallium oxide is remove...

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Bibliographic Details
Published in:Vacuum 1992-03, Vol.43 (3), p.199-201
Main Authors: Mikhailov, G.M., Bulkin, P.V., Khudobin, S.A., Chumakov, A.A., Shapoval, S.Yu
Format: Article
Language:English
Subjects:
Engineering Sciences
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Summary:The composition and the chemical element states of the native oxide of GaAs(100) during ECR-hydrogen cleaning have been investigated. It was found that carbon-containing impurities and arsenic oxide are removed from the surface at a substrate temperature equal to 150°C, while gallium oxide is removed at 350°C. The reduction of arsenic oxide at low substrate temperatures is accompanied by the formation of gallium oxide which diminishes the etching rate.
ISSN:0042-207X
1879-2715
DOI:10.1016/0042-207X(92)90261-T