Study of the impact of hot carrier injection to immunity of MOSFET to electromagnetic interferences

► We use a simple model Sakurai–Newton model to model a 90nm NMOSFET. ► This model can well present the effect of hot carrier injection. ► This model can well present DC offset of drain current induced by EMI coupling on transistor terminals. ► We study the effect of hot carrier injection stress on...

Full description

Saved in:
Bibliographic Details
Published in:Microelectronics and reliability 2011-09, Vol.51 (9-11), p.1557-1560
Main Authors: Li, B., Berbel, N., Boyer, A., BenDhia, S., Fernández-García, R.
Format: Article
Language:English
Subjects:
Analog circuits
Applied sciences
Carrier injection
Circuit properties
Computer simulation
Direct current
Drains
Electric, optical and optoelectronic circuits
Electromagnetic interference
Electronic circuits
Electronics
Engineering Sciences
Exact sciences and technology
MOSFETs
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:► We use a simple model Sakurai–Newton model to model a 90nm NMOSFET. ► This model can well present the effect of hot carrier injection. ► This model can well present DC offset of drain current induced by EMI coupling on transistor terminals. ► We study the effect of hot carrier injection stress on the DC offsets induced by electromagnetic interferences. This paper presents an original study about the effect of hot carrier injection stress on the DC offsets induced by electromagnetic interferences (EMI) on a nanometric NMOS transistor, which is one of the major sources of failures in analog circuits. Measurements and simulations based on a simple model (Sakurai–Newton model) of fresh and stressed transistors are presented and show significant variations of EMI-induced DC shifts of drain current.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2011.06.010