Switching performance of 65 V vertical N-channel FLYMOSFETs

In this paper, the switching performance of 65V vertical N-channel FLYMOSFETs is investigated for the first time and compared with a conventional vertical DMOSFET (VDMOSFET). It is shown that measurements of the different capacitances and the gate charge of the two devices are comparable. A 2D simul...

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Bibliographic Details
Published in:Microelectronics 2008-06, Vol.39 (6), p.914-921
Main Authors: Théolier, L., Isoird, K., Tranduc, H., Morancho, F., Roig, J., Weber, Y., Stefanov, E.N., Reynès, J.-M.
Format: Article
Language:English
Subjects:
Electric power
Engineering Sciences
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Summary:In this paper, the switching performance of 65V vertical N-channel FLYMOSFETs is investigated for the first time and compared with a conventional vertical DMOSFET (VDMOSFET). It is shown that measurements of the different capacitances and the gate charge of the two devices are comparable. A 2D simulation study of two equivalent structures (i.e. FLYMOSFET and VDMOSFET exhibiting the same breakdown voltage) confirms that floating islands did not cause parasitic or new phenomenon, in the case of weakly doped islands.
ISSN:1879-2391
0026-2692
DOI:10.1016/j.mejo.2007.11.009