Impact of dynamic variability on the operation of CMOS inverter

The impact of dynamic variability due to low-frequency fluctuations on the operation of CMOS inverters, which constitute the basic component of SRAM cell, is investigated. The experimental methodology to characterise the effect of dynamic variability in a CMOS inverter is first established based on...

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Bibliographic Details
Published in:Electronics letters 2013-09, Vol.49 (19), p.1214-1216
Main Authors: Ioannidis, E.G, Haendler, S, Manceau, J.-P, Dimitriadis, C.A, Ghibaudo, G
Format: Article
Language:English
Subjects:
Applied sciences
Circuits and systems
CMOS inverter
CMOS memory circuits
Convertors
dynamic variability impact
Electrical engineering. Electrical power engineering
Electrical machines
Engineering Sciences
Exact sciences and technology
invertors
I‐V measurements
load current
low‐frequency noise
Micro and nanotechnologies
Microelectronics
noise margin reduction
Power electronics, power supplies
SRAM cell
SRAM chips
sweep‐to‐sweep dispersion
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Summary:The impact of dynamic variability due to low-frequency fluctuations on the operation of CMOS inverters, which constitute the basic component of SRAM cell, is investigated. The experimental methodology to characterise the effect of dynamic variability in a CMOS inverter is first established based on fast I–V measurements of the load current following the application of a ramp input voltage Vin(t). It is shown that, for small ramp rise times, the load current characteristics IDD(Vin) exhibit a huge sweep-to-sweep dispersion due to low-frequency noise. The impact of such dynamic variability sources on the inverter's output characteristics Vout(Vin) is finally demonstrated, revealing a 20% noise margin reduction for the smallest inverter cell.
ISSN:0013-5194
1350-911X
1350-911X
DOI:10.1049/el.2013.1343