Study of substrate orientations impact on Ultra Thin Buried Oxide (UTBOX) FDSOI High-K Metal gate technology performances

► Comparison between two substrate orientation for FD-SOI devices. ► We studied the carrier mobility degradation as a function of temperature. ► Impurity such as Coulomb scattering, phonons and neutral defect reduce the mobility. In this paper, we compare the electrical properties of Ultra Thin Buri...

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Bibliographic Details
Published in:Solid-state electronics 2013-12, Vol.90, p.143-148
Main Authors: Ben Akkez, Imed, Fenouillet-Beranger, Claire, Cros, Antoine, Perreau, Pierre, Haendler, Sébatien, Weber, Olivier, Andrieu, François, Pellissier-Tanon, D., Abbate, F., Richard, C., Beneyton, R., Gouraud, P., Margain, A., Borowiak, C., Gourvest, E., Bourdelle, K.K., Nguyen, B.Y., Poiroux, T., Skotnicki, Thomas, Faynot, Olivier, Balestra, Francis, Ghibaudo, Gérard, Boeuf, Fréderic
Format: Article
Language:English
Subjects:
Applied sciences
Channels
Compound structure devices
Degradation
Depletion
Devices
Electronics
Engineering Sciences
Exact sciences and technology
Gates
Insulators
Low filed mobility
Low temperature
Micro and nanotechnologies
Microelectronics
Oxides
Rotated/non-rotated substrate
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon substrates
Transistors
Ultra Thin Buried Oxide FDSOI
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Summary:► Comparison between two substrate orientation for FD-SOI devices. ► We studied the carrier mobility degradation as a function of temperature. ► Impurity such as Coulomb scattering, phonons and neutral defect reduce the mobility. In this paper, we compare the electrical properties of Ultra Thin Buried Oxide (UTBOX) Fully Depleted Silicon On Insulator (FDSOI) MOS devices for rotated and non-rotated substrate with different gate lengths. We found a significant performance enhancement on FDSOI PMOSFETs for rotated substrates as expected, while keeping a good control of short channel effects. Surprisingly, to a lower extent, an improvement is also found for NMOS devices. We have also studied the carrier mobility degradation as a function of temperature and we point out the contribution of different mechanisms that reduce the mobility such as impurity Coulomb scattering, phonons and neutral defects as a function of gate length. We find that there is no significant effect of rotated substrate on the mobility degradation at room temperature. All these results are discussed and possible explanations are also given.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2013.02.039