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Bright CdSe quantum dot inserted in single ZnSe nanowires
We report the evidence of CdSe quantum dot (QD) insertion in single defect-free ZnSe nanowire. These nanowires have been grown by molecular beam epitaxy in vapour–liquid–solid growth mode catalysed with gold particles. We developed a two-step process allowing us to grow very thin (from 15 to 5nm) de...
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Published in: | Microelectronics 2009-02, Vol.40 (2), p.253-255 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We report the evidence of CdSe quantum dot (QD) insertion in single defect-free ZnSe nanowire. These nanowires have been grown by molecular beam epitaxy in vapour–liquid–solid growth mode catalysed with gold particles. We developed a two-step process allowing us to grow very thin (from 15 to 5nm) defect-free ZnSe nanowire on top of a nanoneedle, where all defects are localised. The CdSe QDs are incorporated to the defect-free nanowires part. Owing to the extraction efficiency of the nanowires and the reduced number of stacking fault defects in the two-step-process nanowires, a very efficient photoluminescence is observed even on isolated single nanowire. Time-resolved photoluminescence and correlation photon give evidences that the bright photon emission is related to the CdSe QD. |
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ISSN: | 1879-2391 0026-2692 1879-2391 |
DOI: | 10.1016/j.mejo.2008.07.045 |