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Bright CdSe quantum dot inserted in single ZnSe nanowires

We report the evidence of CdSe quantum dot (QD) insertion in single defect-free ZnSe nanowire. These nanowires have been grown by molecular beam epitaxy in vapour–liquid–solid growth mode catalysed with gold particles. We developed a two-step process allowing us to grow very thin (from 15 to 5nm) de...

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Bibliographic Details
Published in:Microelectronics 2009-02, Vol.40 (2), p.253-255
Main Authors: Tribu, A., Sallen, G., Aichele, T., Bougerol, C., André, R., Poizat, J.P., Tatarenko, S., Kheng, K.
Format: Article
Language:English
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Summary:We report the evidence of CdSe quantum dot (QD) insertion in single defect-free ZnSe nanowire. These nanowires have been grown by molecular beam epitaxy in vapour–liquid–solid growth mode catalysed with gold particles. We developed a two-step process allowing us to grow very thin (from 15 to 5nm) defect-free ZnSe nanowire on top of a nanoneedle, where all defects are localised. The CdSe QDs are incorporated to the defect-free nanowires part. Owing to the extraction efficiency of the nanowires and the reduced number of stacking fault defects in the two-step-process nanowires, a very efficient photoluminescence is observed even on isolated single nanowire. Time-resolved photoluminescence and correlation photon give evidences that the bright photon emission is related to the CdSe QD.
ISSN:1879-2391
0026-2692
1879-2391
DOI:10.1016/j.mejo.2008.07.045