Current Conduction Model for Oxide-Based Resistive Random Access Memory Verified by Low-Frequency Noise Analysis

A conduction model consisting of two parallel resistances from a highly conductive filament region and a uniform leakage oxide region is proposed in this brief to represent the current conduction in the filament-type switching resistive random access memory cell. Low-frequency noise analysis of curr...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2013-03, Vol.60 (3), p.1272-1275
Main Authors: Fang, Z., Yu, H. Y., Fan, W. J., Ghibaudo, G., Buckley, J., DeSalvo, B., Li, X., Wang, X. P., Lo, G. Q., Kwong, D. L.
Format: Article
Language:English
Subjects:
Analytical models
Applied sciences
Current conduction model
Design. Technologies. Operation analysis. Testing
Electronics
Engineering Sciences
Exact sciences and technology
Hafnium compounds
Integrated circuits
Integrated circuits by function (including memories and processors)
low-frequency noise (LFN)
Micro and nanotechnologies
Microelectronics
Noise
Radio frequency
Resistance
resistive switching
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Switches
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Summary:A conduction model consisting of two parallel resistances from a highly conductive filament region and a uniform leakage oxide region is proposed in this brief to represent the current conduction in the filament-type switching resistive random access memory cell. Low-frequency noise analysis of current fluctuation at different resistance states has been employed to verify its efficiency. It is found that, in the low-resistance regime, filament resistance dominates current conduction and noise varies as a power law of resistance, whereas in the high-resistance regime, uniform oxide leakage is the major source of conduction, giving rise to a nearly constant noise level.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2013.2240457