Achieving high thermal conductivity from AlN films deposited by high-power impulse magnetron sputtering

• Published in: Journal of physics. D, Applied physics Applied physics, 2014-09, Vol.47 (35), p.1-7
• Main Authors: Aissa, K Ait, Semmar, N, Achour, A, Simon, Q, Petit, A, Camus, J, Boulmer-Leborgne, C, Djouadi, M A
• Format: Article
• Language: English
• Subjects: Aluminum nitride; Chemical and Process Engineering; Deposition; Engineering Sciences; Film thickness; Heat transfer; HiPIMS; Impulses; Magnetron sputtering; pulsed photo-thermal technique; Thermal conductivity; X-rays
• ISSN: 0022-3727; 1361-6463
• DOI: 10.1088/0022-3727/47/35/355303

We report on thermal conductivity measurements of aluminum nitride (AlN) films using the fast pulsed photo-thermal technique. The films were deposited by high-power impulse magnetron sputtering with different thicknesses ranging from 1000 to 8000 nm on (1 0 0) oriented silicon substrates. The films were characterized by x-ray diffraction (XRD), Raman spectroscopy, profilometry, scanning electron microscopy and atomic force microscopy. The XRD measurements showed that AlN films were textured along the (0 0 2) direction. Moreover, x-ray rocking curve measurements indicated that the crystalline quality of AlN was improved with the increase in film thickness. The thermal conductivities of the samples were found to rapidly increase when the film thickness increased up to 3300 nm and then showed a tendency to remain constant. A thermal boundary resistance as low as 8 × 10−9 W−1 K m2 and a thermal conductivity as high as 250 ± 50 W K−1 m−1 were obtained for the AlN films, at room temperature. This high thermal conductivity value is close to that of an AlN single crystal and highlights the potential of these films as a dielectric material for thermal management.