Control of Melt Decomposition for the Growth of High Quality AgGaGeS 4 Single Crystals for Mid-IR Laser Applications

AgGaGeS 4 (AGGS) is a promising nonlinear crystal for mid-IR laser applications which could fulfill the lack of material able to convert a 1.064 µm pump signal (Nd:YAG laser) into wavelengths higher than 4 µm up to 11 µm . The processing steps of this material are presented in this study. The key is...

Full description

Saved in:
Bibliographic Details
Published in:Crystal growth & design 2014-11, Vol.14 (11), p.5554-5560
Main Authors: Rame, J., Viana, B., Clement, Q., Melkonian, J. M., Petit, J.
Format: Article
Language:English
Subjects:
Engineering Sciences
Materials
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:AgGaGeS 4 (AGGS) is a promising nonlinear crystal for mid-IR laser applications which could fulfill the lack of material able to convert a 1.064 µm pump signal (Nd:YAG laser) into wavelengths higher than 4 µm up to 11 µm . The processing steps of this material are presented in this study. The key issue of AGGS crystal processing is the control of decomposition at high temperature due to the high volatility of GeS 2 . This study present the solutions to obtain high quality single crystal. AGGS crystals with 28 mm diameter and 70 mm length were grown by the Bridgman-Stockbarger method. The crystals have good homogeneity and high transparency in the 0.5-11.5 µm spectral range making it suitable for optical experiments. The influence of GeS 2 volatility on melt stoichiometry during the AgGaGeS 4 processing is outlined and solutions to improve the crystals quality are presented.
ISSN:1528-7483
1528-7505
DOI:10.1021/cg500813q