Loading…
Synthesis and characterization of the semiconducting metastable phase Al6Ge5
Metastable Al6Ge5 phase has been synthesized by mechanical alloying. Influence of milling time and stoichiometric ratio on the amount of Al6Ge5 were studied. In the better synthesis conditions, one finds purity of 58wt% from Rietveld refinement, the highest purity reported so far. For the first time...
Saved in:
Published in: | Materials letters 2015-01, Vol.138, p.222-224 |
---|---|
Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | cdi_FETCH-LOGICAL-c373t-e3678fff08712ddd171c63630ee7119adf293f669dc4c3c0630ebab5b4409e9b3 |
---|---|
cites | cdi_FETCH-LOGICAL-c373t-e3678fff08712ddd171c63630ee7119adf293f669dc4c3c0630ebab5b4409e9b3 |
container_end_page | 224 |
container_issue | |
container_start_page | 222 |
container_title | Materials letters |
container_volume | 138 |
creator | Esmilaire, R. Beaudhuin, M. Hermet, P. Fréty, Nicole Ravot, D. Viennois, R. |
description | Metastable Al6Ge5 phase has been synthesized by mechanical alloying. Influence of milling time and stoichiometric ratio on the amount of Al6Ge5 were studied. In the better synthesis conditions, one finds purity of 58wt% from Rietveld refinement, the highest purity reported so far. For the first time, the crystal structure of Al6Ge5 has been fully solved by Rietveld refinement and confirmed by density functional theory (DFT) based calculation. We reported the experimental unpolarized Raman spectrum and the assignment of the main lines is performed using our DFT calculations. The existence of low energy optical modes able to scatter acoustical phonons and its semiconducting nature makes this compound promising for thermoelectric applications.
•The highest purity reported for Al6Ge5 has been obtained by mechanical alloying.•Full structure of Al6Ge5 has been solved.•Full assignments of the Raman active modes have been performed.•Al6Ge5 can be a promising material for thermoelectric applications. |
doi_str_mv | 10.1016/j.matlet.2014.10.001 |
format | article |
fullrecord | <record><control><sourceid>proquest_hal_p</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_01100930v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0167577X14017765</els_id><sourcerecordid>1660041460</sourcerecordid><originalsourceid>FETCH-LOGICAL-c373t-e3678fff08712ddd171c63630ee7119adf293f669dc4c3c0630ebab5b4409e9b3</originalsourceid><addsrcrecordid>eNp9kE1rGzEQhkVJIM7HP8hhj81h3RlLlqxLwYR8FAw9tIXchFaarWX2w5HkQPrrq2VDjz0NvPPMC_MwdouwRED55bDsbe4oL1eAokRLAPzEFrhRvBZa6TO2KJiq10q9XLDLlA4AIDSIBdv9eB_ynlJIlR185fY2Wpcphj82h3GoxrYq6ypRH9w4-JPLYfhd9ZRtyrbpqDrubaJq28knWl-z89Z2iW4-5hX79fjw8_653n1_-na_3dWOK55r4lJt2raFjcKV9x4VOsklByKFqK1vV5q3UmrvhOMOpk1jm3UjBGjSDb9id3Pv3nbmGENv47sZbTDP252ZMkAE0BzesLCfZ_YYx9cTpWz6kBx1nR1oPCWDUhYXKCQUVMyoi2NKkdp_3QhmEm0OZhZtJtFTWkSXs6_zGZWX3wJFk1ygwZEPkVw2fgz_L_gLCjeIIw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1660041460</pqid></control><display><type>article</type><title>Synthesis and characterization of the semiconducting metastable phase Al6Ge5</title><source>ScienceDirect Freedom Collection</source><creator>Esmilaire, R. ; Beaudhuin, M. ; Hermet, P. ; Fréty, Nicole ; Ravot, D. ; Viennois, R.</creator><creatorcontrib>Esmilaire, R. ; Beaudhuin, M. ; Hermet, P. ; Fréty, Nicole ; Ravot, D. ; Viennois, R.</creatorcontrib><description>Metastable Al6Ge5 phase has been synthesized by mechanical alloying. Influence of milling time and stoichiometric ratio on the amount of Al6Ge5 were studied. In the better synthesis conditions, one finds purity of 58wt% from Rietveld refinement, the highest purity reported so far. For the first time, the crystal structure of Al6Ge5 has been fully solved by Rietveld refinement and confirmed by density functional theory (DFT) based calculation. We reported the experimental unpolarized Raman spectrum and the assignment of the main lines is performed using our DFT calculations. The existence of low energy optical modes able to scatter acoustical phonons and its semiconducting nature makes this compound promising for thermoelectric applications.
•The highest purity reported for Al6Ge5 has been obtained by mechanical alloying.•Full structure of Al6Ge5 has been solved.•Full assignments of the Raman active modes have been performed.•Al6Ge5 can be a promising material for thermoelectric applications.</description><identifier>ISSN: 0167-577X</identifier><identifier>EISSN: 1873-4979</identifier><identifier>DOI: 10.1016/j.matlet.2014.10.001</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Acoustics ; Chemical Sciences ; Cristallography ; Crystal structure ; Density functional theory ; Intermetallic alloys and compounds ; Material chemistry ; Mathematical analysis ; Mechanical alloying ; Metallurgy ; Purity ; Raman ; Semiconductors ; Simulation and Modeling ; Synthesis ; Thermoelectricity</subject><ispartof>Materials letters, 2015-01, Vol.138, p.222-224</ispartof><rights>2014 Elsevier B.V.</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c373t-e3678fff08712ddd171c63630ee7119adf293f669dc4c3c0630ebab5b4409e9b3</citedby><cites>FETCH-LOGICAL-c373t-e3678fff08712ddd171c63630ee7119adf293f669dc4c3c0630ebab5b4409e9b3</cites><orcidid>0000-0003-4542-2699 ; 0000-0002-2568-546X ; 0000-0001-8312-3740 ; 0000-0003-3384-2899</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://hal.science/hal-01100930$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Esmilaire, R.</creatorcontrib><creatorcontrib>Beaudhuin, M.</creatorcontrib><creatorcontrib>Hermet, P.</creatorcontrib><creatorcontrib>Fréty, Nicole</creatorcontrib><creatorcontrib>Ravot, D.</creatorcontrib><creatorcontrib>Viennois, R.</creatorcontrib><title>Synthesis and characterization of the semiconducting metastable phase Al6Ge5</title><title>Materials letters</title><description>Metastable Al6Ge5 phase has been synthesized by mechanical alloying. Influence of milling time and stoichiometric ratio on the amount of Al6Ge5 were studied. In the better synthesis conditions, one finds purity of 58wt% from Rietveld refinement, the highest purity reported so far. For the first time, the crystal structure of Al6Ge5 has been fully solved by Rietveld refinement and confirmed by density functional theory (DFT) based calculation. We reported the experimental unpolarized Raman spectrum and the assignment of the main lines is performed using our DFT calculations. The existence of low energy optical modes able to scatter acoustical phonons and its semiconducting nature makes this compound promising for thermoelectric applications.
•The highest purity reported for Al6Ge5 has been obtained by mechanical alloying.•Full structure of Al6Ge5 has been solved.•Full assignments of the Raman active modes have been performed.•Al6Ge5 can be a promising material for thermoelectric applications.</description><subject>Acoustics</subject><subject>Chemical Sciences</subject><subject>Cristallography</subject><subject>Crystal structure</subject><subject>Density functional theory</subject><subject>Intermetallic alloys and compounds</subject><subject>Material chemistry</subject><subject>Mathematical analysis</subject><subject>Mechanical alloying</subject><subject>Metallurgy</subject><subject>Purity</subject><subject>Raman</subject><subject>Semiconductors</subject><subject>Simulation and Modeling</subject><subject>Synthesis</subject><subject>Thermoelectricity</subject><issn>0167-577X</issn><issn>1873-4979</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp9kE1rGzEQhkVJIM7HP8hhj81h3RlLlqxLwYR8FAw9tIXchFaarWX2w5HkQPrrq2VDjz0NvPPMC_MwdouwRED55bDsbe4oL1eAokRLAPzEFrhRvBZa6TO2KJiq10q9XLDLlA4AIDSIBdv9eB_ynlJIlR185fY2Wpcphj82h3GoxrYq6ypRH9w4-JPLYfhd9ZRtyrbpqDrubaJq28knWl-z89Z2iW4-5hX79fjw8_653n1_-na_3dWOK55r4lJt2raFjcKV9x4VOsklByKFqK1vV5q3UmrvhOMOpk1jm3UjBGjSDb9id3Pv3nbmGENv47sZbTDP252ZMkAE0BzesLCfZ_YYx9cTpWz6kBx1nR1oPCWDUhYXKCQUVMyoi2NKkdp_3QhmEm0OZhZtJtFTWkSXs6_zGZWX3wJFk1ygwZEPkVw2fgz_L_gLCjeIIw</recordid><startdate>20150101</startdate><enddate>20150101</enddate><creator>Esmilaire, R.</creator><creator>Beaudhuin, M.</creator><creator>Hermet, P.</creator><creator>Fréty, Nicole</creator><creator>Ravot, D.</creator><creator>Viennois, R.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0003-4542-2699</orcidid><orcidid>https://orcid.org/0000-0002-2568-546X</orcidid><orcidid>https://orcid.org/0000-0001-8312-3740</orcidid><orcidid>https://orcid.org/0000-0003-3384-2899</orcidid></search><sort><creationdate>20150101</creationdate><title>Synthesis and characterization of the semiconducting metastable phase Al6Ge5</title><author>Esmilaire, R. ; Beaudhuin, M. ; Hermet, P. ; Fréty, Nicole ; Ravot, D. ; Viennois, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c373t-e3678fff08712ddd171c63630ee7119adf293f669dc4c3c0630ebab5b4409e9b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Acoustics</topic><topic>Chemical Sciences</topic><topic>Cristallography</topic><topic>Crystal structure</topic><topic>Density functional theory</topic><topic>Intermetallic alloys and compounds</topic><topic>Material chemistry</topic><topic>Mathematical analysis</topic><topic>Mechanical alloying</topic><topic>Metallurgy</topic><topic>Purity</topic><topic>Raman</topic><topic>Semiconductors</topic><topic>Simulation and Modeling</topic><topic>Synthesis</topic><topic>Thermoelectricity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Esmilaire, R.</creatorcontrib><creatorcontrib>Beaudhuin, M.</creatorcontrib><creatorcontrib>Hermet, P.</creatorcontrib><creatorcontrib>Fréty, Nicole</creatorcontrib><creatorcontrib>Ravot, D.</creatorcontrib><creatorcontrib>Viennois, R.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Materials letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Esmilaire, R.</au><au>Beaudhuin, M.</au><au>Hermet, P.</au><au>Fréty, Nicole</au><au>Ravot, D.</au><au>Viennois, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Synthesis and characterization of the semiconducting metastable phase Al6Ge5</atitle><jtitle>Materials letters</jtitle><date>2015-01-01</date><risdate>2015</risdate><volume>138</volume><spage>222</spage><epage>224</epage><pages>222-224</pages><issn>0167-577X</issn><eissn>1873-4979</eissn><abstract>Metastable Al6Ge5 phase has been synthesized by mechanical alloying. Influence of milling time and stoichiometric ratio on the amount of Al6Ge5 were studied. In the better synthesis conditions, one finds purity of 58wt% from Rietveld refinement, the highest purity reported so far. For the first time, the crystal structure of Al6Ge5 has been fully solved by Rietveld refinement and confirmed by density functional theory (DFT) based calculation. We reported the experimental unpolarized Raman spectrum and the assignment of the main lines is performed using our DFT calculations. The existence of low energy optical modes able to scatter acoustical phonons and its semiconducting nature makes this compound promising for thermoelectric applications.
•The highest purity reported for Al6Ge5 has been obtained by mechanical alloying.•Full structure of Al6Ge5 has been solved.•Full assignments of the Raman active modes have been performed.•Al6Ge5 can be a promising material for thermoelectric applications.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.matlet.2014.10.001</doi><tpages>3</tpages><orcidid>https://orcid.org/0000-0003-4542-2699</orcidid><orcidid>https://orcid.org/0000-0002-2568-546X</orcidid><orcidid>https://orcid.org/0000-0001-8312-3740</orcidid><orcidid>https://orcid.org/0000-0003-3384-2899</orcidid></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0167-577X |
ispartof | Materials letters, 2015-01, Vol.138, p.222-224 |
issn | 0167-577X 1873-4979 |
language | eng |
recordid | cdi_hal_primary_oai_HAL_hal_01100930v1 |
source | ScienceDirect Freedom Collection |
subjects | Acoustics Chemical Sciences Cristallography Crystal structure Density functional theory Intermetallic alloys and compounds Material chemistry Mathematical analysis Mechanical alloying Metallurgy Purity Raman Semiconductors Simulation and Modeling Synthesis Thermoelectricity |
title | Synthesis and characterization of the semiconducting metastable phase Al6Ge5 |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T12%3A59%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_hal_p&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Synthesis%20and%20characterization%20of%20the%20semiconducting%20metastable%20phase%20Al6Ge5&rft.jtitle=Materials%20letters&rft.au=Esmilaire,%20R.&rft.date=2015-01-01&rft.volume=138&rft.spage=222&rft.epage=224&rft.pages=222-224&rft.issn=0167-577X&rft.eissn=1873-4979&rft_id=info:doi/10.1016/j.matlet.2014.10.001&rft_dat=%3Cproquest_hal_p%3E1660041460%3C/proquest_hal_p%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c373t-e3678fff08712ddd171c63630ee7119adf293f669dc4c3c0630ebab5b4409e9b3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1660041460&rft_id=info:pmid/&rfr_iscdi=true |