The behaviour of ternary compounds InGaAs and GaAsN subjected to electron irradiation

This paper presents results of the effect of electron beam irradiation under UHV conditions on InGaAs/GaAs and GaAsN/GaAs systems using Auger electron spectroscopy (AES) and the electron energy loss spectroscopy (EELS) as surface analytical techniques. The ternary compounds In 0.53Ga 0.47As and In 0...

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Bibliographic Details
Published in:Vacuum 2007-03, Vol.81 (8), p.979-984
Main Authors: Nouri, A., Lounis, Z., Ouerdane, A., Ghaffour, M., Bouadi, M., Dumont, H., Auvray, L., Bouslama, M.
Format: Article
Language:English
Subjects:
Characterization
Electron
Energy
Heating
Irradiation
Physics
Spectroscopy
Structure
Surface
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Summary:This paper presents results of the effect of electron beam irradiation under UHV conditions on InGaAs/GaAs and GaAsN/GaAs systems using Auger electron spectroscopy (AES) and the electron energy loss spectroscopy (EELS) as surface analytical techniques. The ternary compounds In 0.53Ga 0.47As and In 0.2Ga 0.8As were irradiated by an electron beam under identical conditions (5 KeV; 10 −3 A cm −2; for 60 min). The results showed that the compound In 0.53Ga 0.47As was stable under electron irradiation whereas changes in the Auger signal In–M 45N 45N 45 revealed that the electron beam had a significant effect on the compound In 0.2Ga 0.8As. GaAsN growth at 590 °C on GaAs is believed to produce a surface containing defects that is chemically unstable when bombarded by electrons. It was found that heating this compound at 730 °C stabilised the surface, protecting it from the effect of electron irradiation.
ISSN:0042-207X
1879-2715
DOI:10.1016/j.vacuum.2006.12.001