Photosensitivity of pulsed laser deposited Ge-Sb-Se thin films

Pulsed laser deposition was used to prepare amorphous thin films from (GeSe sub(2)) sub(100-x) (Sb sub(2)Se sub(3)) sub(x) system, where x is varying from 0 to 60. Fabricated films present a good morphology with no cracks nor breaks and relatively low roughness. To study their photosensitivity under...

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Bibliographic Details
Published in:Optical materials express 2015-04, Vol.5 (4), p.781-793
Main Authors: Olivier, M., Němec, P., Boudebs, G., Boidin, R., Focsa, C., Nazabal, V.
Format: Article
Language:English
Subjects:
Annealing
Chemical Sciences
Cracks
Irradiation
Material chemistry
Nonlinearity
Photosensitivity
Pulsed laser deposition
Roughness
Thin films
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Summary:Pulsed laser deposition was used to prepare amorphous thin films from (GeSe sub(2)) sub(100-x) (Sb sub(2)Se sub(3)) sub(x) system, where x is varying from 0 to 60. Fabricated films present a good morphology with no cracks nor breaks and relatively low roughness. To study their photosensitivity under irradiation with energy close to band gap, a comparison of their optical properties (refractive index and band gap energy) before and after irradiation is performed in both, as-deposited and annealed states. In linear regime, annealed films seem to be photostable when x> or =30. In nonlinear regime, highest photoinduced threshold intensity values were found for films with x = 10,16.7 and x = 30, 40. Thus, the highest photostability in both, linear and nonlinear regimes of irradiation, was observed for layers with x = 30 and 40. Finally, the structure of the films is discussed based on Raman scattering spectroscopy results.
ISSN:2159-3930
2159-3930
DOI:10.1364/OME.5.000781