Bandgap energy bowing parameter of strained and relaxed InGaN layers

This paper focuses on the determination of the bandgap energy bowing parameter of strained and relaxed In sub(x)Ga sub(1-x)N layers. Samples are grown by metal organic vapor phase epitaxy on GaN template substrate for indium compositions in the range of 0

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Bibliographic Details
Published in:Optical materials express 2014-05, Vol.4 (5), p.1030-1041
Main Authors: Orsal, G., El Gmili, Y., Fressengeas, N., Streque, J., Djerboub, R., Moudakir, T., Sundaram, S., Ougazzaden, A., Salvestrini, J.P.
Format: Article
Language:English
Subjects:
Bowing
Cathodoluminescence
Condensed Matter
Emission
Energy measurement
Gallium nitrides
Indium
Indium gallium nitrides
Materials Science
Optics
Physics
Three dimensional
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Description
Summary:This paper focuses on the determination of the bandgap energy bowing parameter of strained and relaxed In sub(x)Ga sub(1-x)N layers. Samples are grown by metal organic vapor phase epitaxy on GaN template substrate for indium compositions in the range of 0
ISSN:2159-3930
2159-3930
DOI:10.1364/OME.4.001030