MOVPE grown periodic AlN/BAlN heterostructure with high boron content

Five-period AlN/BAlN heterostructure containing boron as high as 11% has been successfully grown by MOVPE. Good periodicity of two alternative layers has been observed by both SIMS profile and Z-contrast HAADF-STEM images. The BAlN layers demonstrate columnar polycrystalline feature. The BAlN layers...

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Bibliographic Details
Published in:Journal of crystal growth 2015-03, Vol.414, p.119-122
Main Authors: Li, X., Sundaram, S., El Gmili, Y., Genty, F., Bouchoule, S., Patriache, G., Disseix, P., Réveret, F., Leymarie, J., Salvestrini, J.-P., Dupuis, R.D., Voss, P.L., Ougazzaden, A.
Format: Article
Language:English
Subjects:
A3. MOVPE
Aluminum nitride
B1. BAlN
B1. Boron
B1. III-nitrides
Boron
Condensed Matter
Crystal growth
Emission
Heterostructures
Materials Science
Physics
Secondary ion mass spectrometry
Spectral emissivity
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Summary:Five-period AlN/BAlN heterostructure containing boron as high as 11% has been successfully grown by MOVPE. Good periodicity of two alternative layers has been observed by both SIMS profile and Z-contrast HAADF-STEM images. The BAlN layers demonstrate columnar polycrystalline feature. The BAlN layers exhibit an emission peak by CL and absorption edge in transmission spectra at around 260nm. The results enable the development of BAlGaN based multi-layered heterostructure for UV and deep UV applications. •Five-period AlN/BAlN heterostructure containing boron as high as 11% has been successfully grown by MOVPE.•Good periodicity of two alternative layers has been observed by both SIMS profile and Z-contrast HAADF-STEM images.•Crystalline features of this heterostructure have been investigated. BAlN with 11% boron has 5nm monocrystalline thickness and tends to be columnar polycrystalline.•The BAlN layers exhibit an emission peak by CL and absorption edge at around 260nm.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2014.09.030