Atomic and electronic structure of the (2 root 3 x 2 root 3)R30 degrees strained Sn reconstruction on Ge/Si(111)

Motivated by the different behaviour of Sn/Si(1 1 1) and Sn/Ge(1 1 1) in their metal-insulator transition, we have explored the possibility of growing Sn on an ultra-thin Ge layer strained on top of a Si(1 1 1) substrate. We have demonstrated by scanning tunneling microscopy and low energy electron...

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Bibliographic Details
Published in:Journal of electron spectroscopy and related phenomena 2014-08, Vol.195, p.174-178
Main Authors: Srour, Waked, Tejeda, Antonio, Stoffel, Mathieu, Abuín, Manuel, Fagot-Révurat, Yannick, Le Fèvre, Patrick, Taleb-Ibrahimi, Amina, Malterre, Daniel
Format: Article
Language:English
Subjects:
Condensed Matter
Materials Science
Physics
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Summary:Motivated by the different behaviour of Sn/Si(1 1 1) and Sn/Ge(1 1 1) in their metal-insulator transition, we have explored the possibility of growing Sn on an ultra-thin Ge layer strained on top of a Si(1 1 1) substrate. We have demonstrated by scanning tunneling microscopy and low energy electron diffraction that a (2 root 3 x 2 root 3)R30 degrees reconstruction can be stabilized under adequate growth conditions. The size of the reconstructed domains increases progressively up to a coverage of 1.3 monolayer of Sn, as determined by a combined study of scanning tunneling microscopy and core level spectroscopy. This coverage differs from that of Sn/Si(1 1 1) and Sn/Ge(1 1 1) exhibiting Mott phases. Angle resolved photoemission shows that the highly strained reconstruction is a band insulator, with a surface state dispersing roughly between 1300 and 2300 meV of binding energy
ISSN:0368-2048
DOI:10.1016/j.elspec.2014.06.012