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Different Gate Insulators for Organic Field Effect Transistors
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Published in: | Manufacturing Science and Technology 2015-12, Vol.3 (5), p.249-252 |
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Format: | Article |
Language: | English |
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container_end_page | 252 |
container_issue | 5 |
container_start_page | 249 |
container_title | Manufacturing Science and Technology |
container_volume | 3 |
creator | Boughias, O. Belkaid, M.S. Trigaud, T. Zirmi, R. |
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doi_str_mv | 10.13189/mst.2015.030509 |
format | article |
fullrecord | <record><control><sourceid>hal_cross</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_01281215v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_HAL_hal_01281215v1</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1179-cdcbe26f2c59b18c51927950d1c4fafc1b4d2bbcedc792a8a562afe9e14be2ed3</originalsourceid><addsrcrecordid>eNo9kE1LxDAURYMoOIyzd5mti9a8pGmajTCM8wWF2YzrkKSJBjqtJFXw39tadfUuj3Pv4iB0DyQHBpV8vKQhpwR4ThjhRF6hBWWMZbSU4vovC8Zv0SqlYAiIikouxAI9PQfvXXTdgPd6cPjYpY9WD31M2PcRn-Kr7oLFu-DaBm9H1A74HHWXQpqgO3TjdZvc6vcu0ctue94csvq0P27WdWYBhMxsY42jpaeWSwOV5SCpkJw0YAuvvQVTNNQY6xorJNWV5iXV3kkHxdhzDVuih3n3TbfqPYaLjl-q10Ed1rWafgRoBRT4J4wsmVkb-5Si8_8FIOpHlxp1qUmXmnWxb_R3Xjw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Different Gate Insulators for Organic Field Effect Transistors</title><source>Free E-Journal (出版社公開部分のみ)</source><creator>Boughias, O. ; Belkaid, M.S. ; Trigaud, T. ; Zirmi, R.</creator><creatorcontrib>Boughias, O. ; Belkaid, M.S. ; Trigaud, T. ; Zirmi, R.</creatorcontrib><identifier>ISSN: 2333-2735</identifier><identifier>EISSN: 2333-2697</identifier><identifier>DOI: 10.13189/mst.2015.030509</identifier><language>eng</language><publisher>Horizon Research Publishing Corporation</publisher><subject>Engineering Sciences ; Micro and nanotechnologies ; Microelectronics</subject><ispartof>Manufacturing Science and Technology, 2015-12, Vol.3 (5), p.249-252</ispartof><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27923,27924</link.rule.ids><backlink>$$Uhttps://hal.science/hal-01281215$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Boughias, O.</creatorcontrib><creatorcontrib>Belkaid, M.S.</creatorcontrib><creatorcontrib>Trigaud, T.</creatorcontrib><creatorcontrib>Zirmi, R.</creatorcontrib><title>Different Gate Insulators for Organic Field Effect Transistors</title><title>Manufacturing Science and Technology</title><subject>Engineering Sciences</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><issn>2333-2735</issn><issn>2333-2697</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LxDAURYMoOIyzd5mti9a8pGmajTCM8wWF2YzrkKSJBjqtJFXw39tadfUuj3Pv4iB0DyQHBpV8vKQhpwR4ThjhRF6hBWWMZbSU4vovC8Zv0SqlYAiIikouxAI9PQfvXXTdgPd6cPjYpY9WD31M2PcRn-Kr7oLFu-DaBm9H1A74HHWXQpqgO3TjdZvc6vcu0ctue94csvq0P27WdWYBhMxsY42jpaeWSwOV5SCpkJw0YAuvvQVTNNQY6xorJNWV5iXV3kkHxdhzDVuih3n3TbfqPYaLjl-q10Ed1rWafgRoBRT4J4wsmVkb-5Si8_8FIOpHlxp1qUmXmnWxb_R3Xjw</recordid><startdate>201512</startdate><enddate>201512</enddate><creator>Boughias, O.</creator><creator>Belkaid, M.S.</creator><creator>Trigaud, T.</creator><creator>Zirmi, R.</creator><general>Horizon Research Publishing Corporation</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope></search><sort><creationdate>201512</creationdate><title>Different Gate Insulators for Organic Field Effect Transistors</title><author>Boughias, O. ; Belkaid, M.S. ; Trigaud, T. ; Zirmi, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1179-cdcbe26f2c59b18c51927950d1c4fafc1b4d2bbcedc792a8a562afe9e14be2ed3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Engineering Sciences</topic><topic>Micro and nanotechnologies</topic><topic>Microelectronics</topic><toplevel>online_resources</toplevel><creatorcontrib>Boughias, O.</creatorcontrib><creatorcontrib>Belkaid, M.S.</creatorcontrib><creatorcontrib>Trigaud, T.</creatorcontrib><creatorcontrib>Zirmi, R.</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Manufacturing Science and Technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Boughias, O.</au><au>Belkaid, M.S.</au><au>Trigaud, T.</au><au>Zirmi, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Different Gate Insulators for Organic Field Effect Transistors</atitle><jtitle>Manufacturing Science and Technology</jtitle><date>2015-12</date><risdate>2015</risdate><volume>3</volume><issue>5</issue><spage>249</spage><epage>252</epage><pages>249-252</pages><issn>2333-2735</issn><eissn>2333-2697</eissn><pub>Horizon Research Publishing Corporation</pub><doi>10.13189/mst.2015.030509</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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ispartof | Manufacturing Science and Technology, 2015-12, Vol.3 (5), p.249-252 |
issn | 2333-2735 2333-2697 |
language | eng |
recordid | cdi_hal_primary_oai_HAL_hal_01281215v1 |
source | Free E-Journal (出版社公開部分のみ) |
subjects | Engineering Sciences Micro and nanotechnologies Microelectronics |
title | Different Gate Insulators for Organic Field Effect Transistors |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T05%3A52%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-hal_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Different%20Gate%20Insulators%20for%20Organic%20Field%20Effect%20Transistors&rft.jtitle=Manufacturing%20Science%20and%20Technology&rft.au=Boughias,%20O.&rft.date=2015-12&rft.volume=3&rft.issue=5&rft.spage=249&rft.epage=252&rft.pages=249-252&rft.issn=2333-2735&rft.eissn=2333-2697&rft_id=info:doi/10.13189/mst.2015.030509&rft_dat=%3Chal_cross%3Eoai_HAL_hal_01281215v1%3C/hal_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c1179-cdcbe26f2c59b18c51927950d1c4fafc1b4d2bbcedc792a8a562afe9e14be2ed3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |