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Chemical Alkaline Etching of Silicon Mie Particles

Chemical etching via alkaline solutions is associated with electronic litho­graphy to structure at a nanometer scale silicon Mie resonators. Two different alkaline solutions are employed and their influences on the shape of the resonators are discussed. The method is applied on both amorphous and cr...

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Bibliographic Details
Published in:Advanced optical materials 2015-09, Vol.3 (9), p.1280-1286
Main Authors: Proust, Julien, Bedu, Frédéric, Chenot, Stéphane, Soumahoro, Ibrahima, Ozerov, Igor, Gallas, Bruno, Abdeddaim, Redha, Bonod, Nicolas
Format: Article
Language:English
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Summary:Chemical etching via alkaline solutions is associated with electronic litho­graphy to structure at a nanometer scale silicon Mie resonators. Two different alkaline solutions are employed and their influences on the shape of the resonators are discussed. The method is applied on both amorphous and crystalline silicon coatings and silicon resonators are characterized by electron microscopy and optical spectroscopy, and then the different modes are identified thanks to numerical simulations. This method avoids the use of reactive ion etching and appears to be very well adapted to design silicon particles at a nanometer scale for applications in nanophotonics. Silicon Mie resonators are obtained by combining electron beam lithography with wet chemical etching. This chemical etching is studied with two different alkaline solutions and it is proven to lead to Mie resonators with very sharp edges.
ISSN:2195-1071
2195-1071
DOI:10.1002/adom.201500146