Rapid photoreflectance spectroscopy for strained silicon metrology

We present an improved photoreflectance (PR) spectroscopy technique upon the prior art in providing a rapid acquisition method of the PR spectrum in a simultaneous and multiplexed manner. Rapid PR (RPR) application is the on-line monitoring of strained silicon. Shrinkage in the silicon bandgap is me...

Full description

Saved in:
Bibliographic Details
Published in:Review of scientific instruments 2008-10, Vol.79 (10), p.103106-103106-3
Main Authors: Chouaib, H., Murtagh, M. E., Guènebaut, V., Ward, S., Kelly, P. V., Kennard, M., Le Vaillant, Y. M., Somekh, M. G., Pitter, M. C., Sharples, S. D.
Format: Article
Language:English
Subjects:
Condensed Matter
Engineering Sciences
Materials Science
Physics
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We present an improved photoreflectance (PR) spectroscopy technique upon the prior art in providing a rapid acquisition method of the PR spectrum in a simultaneous and multiplexed manner. Rapid PR (RPR) application is the on-line monitoring of strained silicon. Shrinkage in the silicon bandgap is measured and converted to strain, using theoretical models. Experimental RPR results are in good correlation with Raman spectroscopy.
ISSN:0034-6748
1089-7623
DOI:10.1063/1.2999919