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Validation of Direct Analysis Real Time source/Time-of-Flight Mass Spectrometry for organophosphate quantitation on wafer surface
Microelectronic wafers are exposed to airborne molecular contamination (AMC) during the fabrication process of microelectronic components. The organophosphate compounds belonging to the dopant group are one of the most harmful groups. Once adsorbed on the wafer surface these compounds hardly desorb...
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Published in: | Talanta (Oxford) 2015-11, Vol.144, p.1163-1170 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Microelectronic wafers are exposed to airborne molecular contamination (AMC) during the fabrication process of microelectronic components. The organophosphate compounds belonging to the dopant group are one of the most harmful groups. Once adsorbed on the wafer surface these compounds hardly desorb and could diffuse in the bulk of the wafer and invert the wafer from p-type to n-type. The presence of these compounds on wafer surface could have electrical effect on the microelectronic components. For these reasons, it is of importance to control the amount of these compounds on the surface of the wafer.
As a result, a fast quantitative and qualitative analytical method, nondestructive for the wafers, is needed to be able to adjust the process and avoid the loss of an important quantity of processed wafers due to the contamination by organophosphate compounds.
Here we developed and validated an analytical method for the determination of organic compounds adsorbed on the surface of microelectronic wafers using the Direct Analysis in Real Time–Time of Flight-Mass Spectrometry (DART–ToF-MS) system. Specifically, the developed methodology concerns the organophosphate group.
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•Optimization and validation of DART–ToF-MS analytical method.•DART–ToF-MS allows quantitative determination of organophosphate esters compounds.•Contamination process validated by WOS/ATD-GC–MS analysis.•Application of the method to real wafer sample and comparison with WOS/ATD-GC–MS. |
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ISSN: | 0039-9140 1873-3573 |
DOI: | 10.1016/j.talanta.2015.07.080 |