Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy

Thicknesses and compositions of AlGaInAs-based layers grown by low-pressure metal-organic vapor-phase epitaxy (LP-MOVPE) in the regime of selective area growth (SAG) have been measured and calculated. In this study, we have grown InAs, GaAs and AlAs binary bulk layers on patterned InAs and GaAs subs...

Full description

Saved in:
Bibliographic Details
Published in:Journal of crystal growth 2007, Vol.298, p.28-31
Main Authors: Décobert, J., Dupuis, N., Lagrée, P.Y., Lagay, N., Ramdane, A., Ougazzaden, A., Poingt, F., Cuisin, C., Kazmierski, C.
Format: Article
Language:English
Subjects:
A3. Metal-organic vapor-phase epitaxy
A3. Selective epitaxy
B2. Semiconducting III–V materials
Biomechanics
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Fluid mechanics
Materials science
Mechanics
Methods of deposition of films and coatings
film growth and epitaxy
Other semiconductors
Physics
Specific materials
Thermics
Vapor phase epitaxy
growth from vapor phase
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Thicknesses and compositions of AlGaInAs-based layers grown by low-pressure metal-organic vapor-phase epitaxy (LP-MOVPE) in the regime of selective area growth (SAG) have been measured and calculated. In this study, we have grown InAs, GaAs and AlAs binary bulk layers on patterned InAs and GaAs substrates, respectively, in order to assess separately the vapor-phase diffusion (VPD) length ( D/ k) of indium, gallium and aluminum species. Special care has been taken in the evaluation of the Aluminum D/ k ratio, on which little information was available. A 3D VPD model has been used to predict the composition and thickness profiles of various alloys. The calculated profiles have been compared to the experimental ones for GaInAs, AlInAs, AlGaInAs layers and GaAlAs layers deposited on patterned InP and GaAs substrates, respectively. The good agreement between modeling and experiment, together with the perfect selectivity obtained for all the different alloys, holds for the validity of the calculated D/ k ratio of Al, Ga and In species. In MOVPE-SAG, the efficiency of a computational model is a key issue for the engineering of future SAG integrated optical devices.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2006.10.005