Transport mechanism through metal-cobaltite interfaces

The resistive switching (RS) properties as a function of temperature were studied for Ag/La1− x Sr x CoO3 (LSCO) interfaces. The LSCO is a fully relaxed 100 nm film grown by metal organic deposition on a LaAlO3 substrate. Both low and a high resistance states were set at room temperature, and the te...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2016-07, Vol.109 (1)
Main Authors: Acha, C., Schulman, A., Boudard, M., Daoudi, K., Tsuchiya, T.
Format: Article
Language:English
Subjects:
Applied physics
Chemical Sciences
Current voltage characteristics
Dielectric properties
High resistance
Material chemistry
Substrates
Temperature dependence
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The resistive switching (RS) properties as a function of temperature were studied for Ag/La1− x Sr x CoO3 (LSCO) interfaces. The LSCO is a fully relaxed 100 nm film grown by metal organic deposition on a LaAlO3 substrate. Both low and a high resistance states were set at room temperature, and the temperature dependence of their current-voltage (IV) characteristics was measured taking care to avoid a significant change of the resistance state. The obtained non-trivial IV curves of each state were well reproduced by a circuit model which includes a Poole-Frenkel element and two ohmic resistances. A microscopic description of the changes produced by the RS is given, which enables to envision a picture of the interface as an area where conductive and insulating phases are mixed, producing Maxwell-Wagner contributions to the dielectric properties.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4955204