Diamond as substrate for 3C-SiC growth: A TEM study

Vapor–liquid–solid (V–L–S) growth of SiC on (100) diamond substrate is reported. The crystalline quality is evaluated by transmission electron microscopy (TEM). Diffraction contrast (CTEM) observations allowed confirming the growth of fully lattice relaxed SiC 3C‐type crystalline structure. Defects...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2014-10, Vol.211 (10), p.2302-2306
Main Authors: Lloret, F., Piñero, J., Araujo, D., Villar, M. P., Gheeraert, E., Vo-Ha, A., Soulière, V., Rebaud, M., Carole, D., Ferro, G.
Format: Article
Language:English
Subjects:
Burgers vector
Condensed Matter
Criteria
Crystal defects
Crystal structure
diamond
Diamonds
Diffraction
Engineering Sciences
heteropitaxy
Materials
Materials Science
Physics
SiC
Silicon carbide
TEM
Transmission electron microscopy
VLS
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Summary:Vapor–liquid–solid (V–L–S) growth of SiC on (100) diamond substrate is reported. The crystalline quality is evaluated by transmission electron microscopy (TEM). Diffraction contrast (CTEM) observations allowed confirming the growth of fully lattice relaxed SiC 3C‐type crystalline structure. Defects as dislocations at the diamond/SiC interface and stacking faults, in the thick SiC layer are revealed by high resolution TEM and CTEM. From the invisibility criteria, using dark field observations, 〈110〉 type Burger vector are identified.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201431179