Design of mid-infrared InAs/GaSb superlattice detectors for room temperature operation

• Published in: Finite elements in analysis and design 2008-06, Vol.44 (9), p.611-616
• Main Authors: Cuminal, Y., Rodriguez, J.B., Christol, P.
• Format: Article
• Language: English
• Subjects: Electronics; Engineering Sciences; Exact sciences and technology; FEMLAB; InAs/GaSb; Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Mid-infrared; Photodetector; Physics; Superlattices
• ISSN: 0168-874X; 1872-6925
• DOI: 10.1016/j.finel.2008.02.004

This paper presents the simulation of mid-infrared InAs/GaSb superlattice (SL) detectors by using a finite element FEMLAB code, which is a practical and useful tool to characterize and to define microelectronic devices with appropriate geometry. In the framework of this FEMLAB code, the electro-optic performances of the SL photodetectors for room temperature (RT) operation are theoretical evaluated in terms of zero-bias resistance-area product R 0 A and of external quantum efficiency η in order to estimate the specific detectivity D * . In the case of realistic SL active zone, calculated results show an optimal active zone thickness of about 1.3 μ m and a RT specific detectivity D λ * = 2 × 10 9 cm W - 1 Hz 1 / 2 at λ = 4 μ m . This expected value demonstrates that InAs/GaSb SL detector is a competitive technology suitable for third generation detectors.