Metamorphic III–V semiconductor lasers grown on silicon

The epitaxial integration of III–V optoelectronic devices on silicon will be the enabling technology for full-scale deployment of silicon photonics and the key to improving communication systems. Silicon photonics also offer new opportunities for the realization of ultracompact and fully integrated...

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Bibliographic Details
Published in:MRS bulletin 2016-03, Vol.41 (3), p.218-223
Main Authors: Tournié, Eric, Cerutti, Laurent, Rodriguez, Jean-Baptiste, Liu, Huiyun, Wu, Jiang, Chen, Siming
Format: Article
Language:English
Subjects:
Applied and Technical Physics
Characterization and Evaluation of Materials
Communications systems
Density
Electronics
Energy Materials
Engineering Sciences
Epitaxial growth
Group III-V semiconductors
Infrared radiation
Interfaces
Lasers
Materials Engineering
Materials Science
Metamorphic
Metamorphic Epitaxial Materials
Misfit dislocations
Molecular beam epitaxy
Nanotechnology
Operating temperature
Optoelectronic devices
Photonics
Quantum dot lasers
Quantum dots
Quantum well lasers
Quantum wells
Semiconductor lasers
Semiconductors
Silicon
Silicon substrates
Threshold currents
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Summary:The epitaxial integration of III–V optoelectronic devices on silicon will be the enabling technology for full-scale deployment of silicon photonics and the key to improving communication systems. Silicon photonics also offer new opportunities for the realization of ultracompact and fully integrated sensing systems operating in the mid-infrared (MIR) regime of the spectrum. In this article, we review recent developments, through several approaches, in the direct metamorphic epitaxial growth of various III–V materials-based lasers on silicon substrates. We show that GaAs-based 1.3-μm III–V quantum dot lasers and GaSb-based MIR quantum-well lasers grown on silicon substrates can operate with low threshold current density and high operating temperature, which hold promise for the future.
ISSN:0883-7694
1938-1425
DOI:10.1557/mrs.2016.24