High fluence 1.8MeV proton irradiation effects on n-type MOS capacitors

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Bibliographic Details
Published in:Microelectronics and reliability 2011-12, Vol.51 (12), p.2093-2096
Main Authors: Arinero, R., Zhang, E.X., Rezzak, N., Schrimpf, R.D., Fleetwood, D.M., Choï, B.K., Hmelo, A.B., Mekki, J., Touboul, A.D., Saigné, F.
Format: Article
Language:English
Subjects:
Electronics
Engineering Sciences
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ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2011.05.019