Loading…

Surface potential investigation on interdigitated back contact solar cells by Scanning Electron Microscopy and Kelvin Probe Force Microscopy: Effect of electrical bias

Both Kelvin Probe Force Microscopy and Scanning Electron Microscopy enable assessment of the effect of electrical bias on the surface potential of the layers of a solar cell. We report on a comprehensive comparison of surface potential measurements on an interdigitated back contact solar cell using...

Full description

Saved in:
Bibliographic Details
Published in:Solar energy materials and solar cells 2017-03, Vol.161, p.263-269
Main Authors: Narchi, Paul, Neplokh, Vladimir, Piazza, Valerio, Bearda, Twan, Bayle, Fabien, Foldyna, Martin, Toccafondi, Chiara, Prod’homme, Patricia, Tchernycheva, Maria, Roca i Cabarrocas, Pere
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c368t-442af8e02c2c1603a255d7463ee06b6504de1455123ec58aae737526ac1f76923
cites cdi_FETCH-LOGICAL-c368t-442af8e02c2c1603a255d7463ee06b6504de1455123ec58aae737526ac1f76923
container_end_page 269
container_issue
container_start_page 263
container_title Solar energy materials and solar cells
container_volume 161
creator Narchi, Paul
Neplokh, Vladimir
Piazza, Valerio
Bearda, Twan
Bayle, Fabien
Foldyna, Martin
Toccafondi, Chiara
Prod’homme, Patricia
Tchernycheva, Maria
Roca i Cabarrocas, Pere
description Both Kelvin Probe Force Microscopy and Scanning Electron Microscopy enable assessment of the effect of electrical bias on the surface potential of the layers of a solar cell. We report on a comprehensive comparison of surface potential measurements on an interdigitated back contact solar cell using these two techniques. Measurements under different values of electrical biases are performed on and between the metallic contacts. They show a good agreement between the surface potential obtained with Kelvin Probe Force Microscopy and the Scanning Electron Microscopy signal. In order to provide an accurate comparison, the scanned areas are adjacent to each other and accurate repositioning is achieved thanks to a nano-indentation between the contacts. We show that measurements under reverse bias are of interest to locate nano-defects and measurements under forward bias are relevant to identify local series resistance issues. We suggest that a setup combining Scanning Electron Microscopy and Kelvin Probe Force Microscopy under different values of the electrical bias should be valuable since the former is a high throughput technique enabling measurements on large scan areas, while the latter is a quantitative, low noise, and unintrusive local technique. •SEM and KPFM assess the effect of voltage on surface potential of IBC solar cells.•KPFM enables to measure electrical bias changes value on IBC solar cells.•Measurements under reverse bias can enable to reveal electrical defects.•Measurements under forward biases can enable to locate zones of series resistance.•Nano-identation is an effective technique for accurate repositioning at the nano-scale.
doi_str_mv 10.1016/j.solmat.2016.12.009
format article
fullrecord <record><control><sourceid>proquest_hal_p</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_01640075v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S092702481630530X</els_id><sourcerecordid>1956018900</sourcerecordid><originalsourceid>FETCH-LOGICAL-c368t-442af8e02c2c1603a255d7463ee06b6504de1455123ec58aae737526ac1f76923</originalsourceid><addsrcrecordid>eNp9UcGKFDEQbUTBcfUPPAQ8eei2knSnuz0IyzK7KzuisHoO1enqMWNvMiaZgfkif9OMLe5NCBQp3ntV9V5RvOZQceDq3a6Kfn7AVIn8q7ioAPonxYp3bV9K2XdPixX0oi1B1N3z4kWMOwAQStar4tf9IUxoiO19Ipcszsy6I8Vkt5isdyw_6xKF0W5twkQjG9D8YMa7hCaxPBgDMzTPkQ0ndm_QOeu2bD2TSSGTP1kTfDR-f2LoRnZH89E69iX4gdi1D3nyI-I9W09T5jE_MfojYE1eaLAYXxbPJpwjvfpbL4pv1-uvV7fl5vPNx6vLTWmk6lJZ1wKnjkAYYbgCiaJpxrZWkgjUoBqoR-J103AhyTQdIrWybYRCw6dW9UJeFG8X3e84632wDxhO2qPVt5cbfe5lh2uAtjnyjH2zYPfB_zxkz_TOH4LL62neNwp41wNkVL2gzlfGQNM_WQ76HJ_e6SU-fY5Pc6FzfJn2YaFRvvZoKehoLDlDow3ZGT16-3-B33BCp1E</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1956018900</pqid></control><display><type>article</type><title>Surface potential investigation on interdigitated back contact solar cells by Scanning Electron Microscopy and Kelvin Probe Force Microscopy: Effect of electrical bias</title><source>ScienceDirect Freedom Collection</source><creator>Narchi, Paul ; Neplokh, Vladimir ; Piazza, Valerio ; Bearda, Twan ; Bayle, Fabien ; Foldyna, Martin ; Toccafondi, Chiara ; Prod’homme, Patricia ; Tchernycheva, Maria ; Roca i Cabarrocas, Pere</creator><creatorcontrib>Narchi, Paul ; Neplokh, Vladimir ; Piazza, Valerio ; Bearda, Twan ; Bayle, Fabien ; Foldyna, Martin ; Toccafondi, Chiara ; Prod’homme, Patricia ; Tchernycheva, Maria ; Roca i Cabarrocas, Pere</creatorcontrib><description>Both Kelvin Probe Force Microscopy and Scanning Electron Microscopy enable assessment of the effect of electrical bias on the surface potential of the layers of a solar cell. We report on a comprehensive comparison of surface potential measurements on an interdigitated back contact solar cell using these two techniques. Measurements under different values of electrical biases are performed on and between the metallic contacts. They show a good agreement between the surface potential obtained with Kelvin Probe Force Microscopy and the Scanning Electron Microscopy signal. In order to provide an accurate comparison, the scanned areas are adjacent to each other and accurate repositioning is achieved thanks to a nano-indentation between the contacts. We show that measurements under reverse bias are of interest to locate nano-defects and measurements under forward bias are relevant to identify local series resistance issues. We suggest that a setup combining Scanning Electron Microscopy and Kelvin Probe Force Microscopy under different values of the electrical bias should be valuable since the former is a high throughput technique enabling measurements on large scan areas, while the latter is a quantitative, low noise, and unintrusive local technique. •SEM and KPFM assess the effect of voltage on surface potential of IBC solar cells.•KPFM enables to measure electrical bias changes value on IBC solar cells.•Measurements under reverse bias can enable to reveal electrical defects.•Measurements under forward biases can enable to locate zones of series resistance.•Nano-identation is an effective technique for accurate repositioning at the nano-scale.</description><identifier>ISSN: 0927-0248</identifier><identifier>EISSN: 1879-3398</identifier><identifier>DOI: 10.1016/j.solmat.2016.12.009</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Bias ; Condensed Matter ; Electric contacts ; Electron microscopy ; Electrons ; Heterojunction ; Indentation ; Interdigitated back contact ; Kelvin Probe Force Microscopy ; Low noise ; Materials Science ; Photovoltaic cells ; Physics ; Scanning Electron Microscopy ; Silicon ; Solar cells</subject><ispartof>Solar energy materials and solar cells, 2017-03, Vol.161, p.263-269</ispartof><rights>2016 Elsevier B.V.</rights><rights>Copyright Elsevier BV Mar 2017</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c368t-442af8e02c2c1603a255d7463ee06b6504de1455123ec58aae737526ac1f76923</citedby><cites>FETCH-LOGICAL-c368t-442af8e02c2c1603a255d7463ee06b6504de1455123ec58aae737526ac1f76923</cites><orcidid>0000-0001-8413-0504 ; 0000-0003-4144-0793 ; 0000-0003-2241-2762</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://polytechnique.hal.science/hal-01640075$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Narchi, Paul</creatorcontrib><creatorcontrib>Neplokh, Vladimir</creatorcontrib><creatorcontrib>Piazza, Valerio</creatorcontrib><creatorcontrib>Bearda, Twan</creatorcontrib><creatorcontrib>Bayle, Fabien</creatorcontrib><creatorcontrib>Foldyna, Martin</creatorcontrib><creatorcontrib>Toccafondi, Chiara</creatorcontrib><creatorcontrib>Prod’homme, Patricia</creatorcontrib><creatorcontrib>Tchernycheva, Maria</creatorcontrib><creatorcontrib>Roca i Cabarrocas, Pere</creatorcontrib><title>Surface potential investigation on interdigitated back contact solar cells by Scanning Electron Microscopy and Kelvin Probe Force Microscopy: Effect of electrical bias</title><title>Solar energy materials and solar cells</title><description>Both Kelvin Probe Force Microscopy and Scanning Electron Microscopy enable assessment of the effect of electrical bias on the surface potential of the layers of a solar cell. We report on a comprehensive comparison of surface potential measurements on an interdigitated back contact solar cell using these two techniques. Measurements under different values of electrical biases are performed on and between the metallic contacts. They show a good agreement between the surface potential obtained with Kelvin Probe Force Microscopy and the Scanning Electron Microscopy signal. In order to provide an accurate comparison, the scanned areas are adjacent to each other and accurate repositioning is achieved thanks to a nano-indentation between the contacts. We show that measurements under reverse bias are of interest to locate nano-defects and measurements under forward bias are relevant to identify local series resistance issues. We suggest that a setup combining Scanning Electron Microscopy and Kelvin Probe Force Microscopy under different values of the electrical bias should be valuable since the former is a high throughput technique enabling measurements on large scan areas, while the latter is a quantitative, low noise, and unintrusive local technique. •SEM and KPFM assess the effect of voltage on surface potential of IBC solar cells.•KPFM enables to measure electrical bias changes value on IBC solar cells.•Measurements under reverse bias can enable to reveal electrical defects.•Measurements under forward biases can enable to locate zones of series resistance.•Nano-identation is an effective technique for accurate repositioning at the nano-scale.</description><subject>Bias</subject><subject>Condensed Matter</subject><subject>Electric contacts</subject><subject>Electron microscopy</subject><subject>Electrons</subject><subject>Heterojunction</subject><subject>Indentation</subject><subject>Interdigitated back contact</subject><subject>Kelvin Probe Force Microscopy</subject><subject>Low noise</subject><subject>Materials Science</subject><subject>Photovoltaic cells</subject><subject>Physics</subject><subject>Scanning Electron Microscopy</subject><subject>Silicon</subject><subject>Solar cells</subject><issn>0927-0248</issn><issn>1879-3398</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp9UcGKFDEQbUTBcfUPPAQ8eei2knSnuz0IyzK7KzuisHoO1enqMWNvMiaZgfkif9OMLe5NCBQp3ntV9V5RvOZQceDq3a6Kfn7AVIn8q7ioAPonxYp3bV9K2XdPixX0oi1B1N3z4kWMOwAQStar4tf9IUxoiO19Ipcszsy6I8Vkt5isdyw_6xKF0W5twkQjG9D8YMa7hCaxPBgDMzTPkQ0ndm_QOeu2bD2TSSGTP1kTfDR-f2LoRnZH89E69iX4gdi1D3nyI-I9W09T5jE_MfojYE1eaLAYXxbPJpwjvfpbL4pv1-uvV7fl5vPNx6vLTWmk6lJZ1wKnjkAYYbgCiaJpxrZWkgjUoBqoR-J103AhyTQdIrWybYRCw6dW9UJeFG8X3e84632wDxhO2qPVt5cbfe5lh2uAtjnyjH2zYPfB_zxkz_TOH4LL62neNwp41wNkVL2gzlfGQNM_WQ76HJ_e6SU-fY5Pc6FzfJn2YaFRvvZoKehoLDlDow3ZGT16-3-B33BCp1E</recordid><startdate>201703</startdate><enddate>201703</enddate><creator>Narchi, Paul</creator><creator>Neplokh, Vladimir</creator><creator>Piazza, Valerio</creator><creator>Bearda, Twan</creator><creator>Bayle, Fabien</creator><creator>Foldyna, Martin</creator><creator>Toccafondi, Chiara</creator><creator>Prod’homme, Patricia</creator><creator>Tchernycheva, Maria</creator><creator>Roca i Cabarrocas, Pere</creator><general>Elsevier B.V</general><general>Elsevier BV</general><general>Elsevier</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7ST</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>C1K</scope><scope>FR3</scope><scope>L7M</scope><scope>SOI</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0001-8413-0504</orcidid><orcidid>https://orcid.org/0000-0003-4144-0793</orcidid><orcidid>https://orcid.org/0000-0003-2241-2762</orcidid></search><sort><creationdate>201703</creationdate><title>Surface potential investigation on interdigitated back contact solar cells by Scanning Electron Microscopy and Kelvin Probe Force Microscopy: Effect of electrical bias</title><author>Narchi, Paul ; Neplokh, Vladimir ; Piazza, Valerio ; Bearda, Twan ; Bayle, Fabien ; Foldyna, Martin ; Toccafondi, Chiara ; Prod’homme, Patricia ; Tchernycheva, Maria ; Roca i Cabarrocas, Pere</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-442af8e02c2c1603a255d7463ee06b6504de1455123ec58aae737526ac1f76923</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Bias</topic><topic>Condensed Matter</topic><topic>Electric contacts</topic><topic>Electron microscopy</topic><topic>Electrons</topic><topic>Heterojunction</topic><topic>Indentation</topic><topic>Interdigitated back contact</topic><topic>Kelvin Probe Force Microscopy</topic><topic>Low noise</topic><topic>Materials Science</topic><topic>Photovoltaic cells</topic><topic>Physics</topic><topic>Scanning Electron Microscopy</topic><topic>Silicon</topic><topic>Solar cells</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Narchi, Paul</creatorcontrib><creatorcontrib>Neplokh, Vladimir</creatorcontrib><creatorcontrib>Piazza, Valerio</creatorcontrib><creatorcontrib>Bearda, Twan</creatorcontrib><creatorcontrib>Bayle, Fabien</creatorcontrib><creatorcontrib>Foldyna, Martin</creatorcontrib><creatorcontrib>Toccafondi, Chiara</creatorcontrib><creatorcontrib>Prod’homme, Patricia</creatorcontrib><creatorcontrib>Tchernycheva, Maria</creatorcontrib><creatorcontrib>Roca i Cabarrocas, Pere</creatorcontrib><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Environment Abstracts</collection><collection>Mechanical &amp; Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Environment Abstracts</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Solar energy materials and solar cells</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Narchi, Paul</au><au>Neplokh, Vladimir</au><au>Piazza, Valerio</au><au>Bearda, Twan</au><au>Bayle, Fabien</au><au>Foldyna, Martin</au><au>Toccafondi, Chiara</au><au>Prod’homme, Patricia</au><au>Tchernycheva, Maria</au><au>Roca i Cabarrocas, Pere</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Surface potential investigation on interdigitated back contact solar cells by Scanning Electron Microscopy and Kelvin Probe Force Microscopy: Effect of electrical bias</atitle><jtitle>Solar energy materials and solar cells</jtitle><date>2017-03</date><risdate>2017</risdate><volume>161</volume><spage>263</spage><epage>269</epage><pages>263-269</pages><issn>0927-0248</issn><eissn>1879-3398</eissn><abstract>Both Kelvin Probe Force Microscopy and Scanning Electron Microscopy enable assessment of the effect of electrical bias on the surface potential of the layers of a solar cell. We report on a comprehensive comparison of surface potential measurements on an interdigitated back contact solar cell using these two techniques. Measurements under different values of electrical biases are performed on and between the metallic contacts. They show a good agreement between the surface potential obtained with Kelvin Probe Force Microscopy and the Scanning Electron Microscopy signal. In order to provide an accurate comparison, the scanned areas are adjacent to each other and accurate repositioning is achieved thanks to a nano-indentation between the contacts. We show that measurements under reverse bias are of interest to locate nano-defects and measurements under forward bias are relevant to identify local series resistance issues. We suggest that a setup combining Scanning Electron Microscopy and Kelvin Probe Force Microscopy under different values of the electrical bias should be valuable since the former is a high throughput technique enabling measurements on large scan areas, while the latter is a quantitative, low noise, and unintrusive local technique. •SEM and KPFM assess the effect of voltage on surface potential of IBC solar cells.•KPFM enables to measure electrical bias changes value on IBC solar cells.•Measurements under reverse bias can enable to reveal electrical defects.•Measurements under forward biases can enable to locate zones of series resistance.•Nano-identation is an effective technique for accurate repositioning at the nano-scale.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.solmat.2016.12.009</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0001-8413-0504</orcidid><orcidid>https://orcid.org/0000-0003-4144-0793</orcidid><orcidid>https://orcid.org/0000-0003-2241-2762</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 0927-0248
ispartof Solar energy materials and solar cells, 2017-03, Vol.161, p.263-269
issn 0927-0248
1879-3398
language eng
recordid cdi_hal_primary_oai_HAL_hal_01640075v1
source ScienceDirect Freedom Collection
subjects Bias
Condensed Matter
Electric contacts
Electron microscopy
Electrons
Heterojunction
Indentation
Interdigitated back contact
Kelvin Probe Force Microscopy
Low noise
Materials Science
Photovoltaic cells
Physics
Scanning Electron Microscopy
Silicon
Solar cells
title Surface potential investigation on interdigitated back contact solar cells by Scanning Electron Microscopy and Kelvin Probe Force Microscopy: Effect of electrical bias
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-10T12%3A40%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_hal_p&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Surface%20potential%20investigation%20on%20interdigitated%20back%20contact%20solar%20cells%20by%20Scanning%20Electron%20Microscopy%20and%20Kelvin%20Probe%20Force%20Microscopy:%20Effect%20of%20electrical%20bias&rft.jtitle=Solar%20energy%20materials%20and%20solar%20cells&rft.au=Narchi,%20Paul&rft.date=2017-03&rft.volume=161&rft.spage=263&rft.epage=269&rft.pages=263-269&rft.issn=0927-0248&rft.eissn=1879-3398&rft_id=info:doi/10.1016/j.solmat.2016.12.009&rft_dat=%3Cproquest_hal_p%3E1956018900%3C/proquest_hal_p%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c368t-442af8e02c2c1603a255d7463ee06b6504de1455123ec58aae737526ac1f76923%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1956018900&rft_id=info:pmid/&rfr_iscdi=true