Stochastic geometrical modeling of solid oxide cells electrodes validated on 3D reconstructions

An original 3D stochastic model, based on the truncated plurigaussian random fields, has been adapted to simulate the complex microstructure of SOC electrodes. The representativeness of the virtual microstructures has been checked on several synchrotron X-ray and FIB-SEM tomographic reconstructions...

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Bibliographic Details
Published in:Computational materials science 2018-02, Vol.143, p.262-276
Main Authors: Moussaoui, H., Laurencin, J., Gavet, Y., Delette, G., Hubert, M., Cloetens, P., Le Bihan, T., Debayle, J.
Format: Article
Language:English
Subjects:
3D microstructure model
Chemical and Process Engineering
Computer Science
Computer Vision and Pattern Recognition
Electrode design
Engineering Sciences
Modeling and Simulation
Signal and Image Processing
Solid oxide cell
Truncated plurigaussian random fields
X-ray tomography
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Summary:An original 3D stochastic model, based on the truncated plurigaussian random fields, has been adapted to simulate the complex microstructure of SOC electrodes. The representativeness of the virtual microstructures has been checked on several synchrotron X-ray and FIB-SEM tomographic reconstructions obtained on typical LSCF, LSC and Ni-YSZ electrodes. The validation step has been carried out by comparing numbers of electrode morphological properties as well as the phase effective diffusivities. This analysis has shown that the synthetic media mimic accurately the complex microstructure of typical SOC electrodes. The model capability to simulate different types of promising electrode architectures has also been investigated. It has been shown that the model is able to generate virtual electrode prepared by infiltration resulting in a uniform and continuous thin layer covering a scaffold. With a local thresholding depending on the position, continuous graded electrodes can be also produced. Finally, the model offers the possibility to introduce different correlation lengths for each phase in order to control the local topology of the interfaces. All these cases illustrate the model flexibility to generate various SOC microstructures. This validated and flexible model can be used for further numerical microstructural optimizations to improve the SOC performances.
ISSN:0927-0256
1879-0801
DOI:10.1016/j.commatsci.2017.11.015