Phase formation between Ni thin films and GaAs substrate

In situ X-Ray Diffraction, X-Ray Reflectivity and High Resolution Transmission Electron Microscopy were used to investigate the sequence and the texture of phase formation during the solid-state reaction of Ni thin film with GaAs substrate. These results show the formation of a unique Ni3GaAs crysta...

Full description

Saved in:
Bibliographic Details
Published in:Scripta materialia 2017-12, Vol.141, p.28-31
Main Authors: Rabhi, S., Perrin-Pellegrino, C., Zhiou, S., Benoudia, M.C., Texier, M., Hoummada, K.
Format: Article
Language:English
Subjects:
Contacts
Engineering Sciences
GaAs
Intermetallic growth
Micro and nanotechnologies
Microelectronics
Reaction
Self-diffusion
Thin films
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c352t-7efa84fdef53c07599927e93c3a99ca63f1c42d8f5c1c413af0f05dfaf94af2b3
cites cdi_FETCH-LOGICAL-c352t-7efa84fdef53c07599927e93c3a99ca63f1c42d8f5c1c413af0f05dfaf94af2b3
container_end_page 31
container_issue
container_start_page 28
container_title Scripta materialia
container_volume 141
creator Rabhi, S.
Perrin-Pellegrino, C.
Zhiou, S.
Benoudia, M.C.
Texier, M.
Hoummada, K.
description In situ X-Ray Diffraction, X-Ray Reflectivity and High Resolution Transmission Electron Microscopy were used to investigate the sequence and the texture of phase formation during the solid-state reaction of Ni thin film with GaAs substrate. These results show the formation of a unique Ni3GaAs crystalline phase at 200°C that remains stable until 400°C. The epitaxial relationships between this phase and the GaAs substrate were also evidenced. The formation of this unique phase, along with the variation of its lattice parameters when Ni is totally consumed, can be explained by local thermodynamic equilibrium and kinetics arguments. [Display omitted]
doi_str_mv 10.1016/j.scriptamat.2017.07.011
format article
fullrecord <record><control><sourceid>hal_cross</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_01694002v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S1359646217304165</els_id><sourcerecordid>oai_HAL_hal_01694002v1</sourcerecordid><originalsourceid>FETCH-LOGICAL-c352t-7efa84fdef53c07599927e93c3a99ca63f1c42d8f5c1c413af0f05dfaf94af2b3</originalsourceid><addsrcrecordid>eNqFkE9LAzEQxYMoWKvfIVcPu-bPZndzrEVboagHPYdpdkJT2t2SxIrf3iwVPQoPZhjeezA_QihnJWe8vtuW0QZ_SLCHVArGm5JlcX5GJrxtRNFWqj7Pu1S6qKtaXJKrGLeMsZoLPiHt6wYiUjeEnPdDT9eYPhF7-uxp2vieOr_bRwp9RxcwizR-rGMKkPCaXDjYRbz5mVPy_vjwNl8Wq5fF03y2KqxUIhUNOmgr16FT0rJGaa1Fg1paCVpbqKXjthJd65TNC5fgmGOqc-B0BU6s5ZTcnno3sDOH4PcQvswA3ixnKzPeMgRdMSaOPHvbk9eGIcaA7jfAmRlpma35o2VGWoZl8TF6f4pi_uXoMWSjx95i5wPaZLrB_1_yDZhdeEc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Phase formation between Ni thin films and GaAs substrate</title><source>ScienceDirect Journals</source><creator>Rabhi, S. ; Perrin-Pellegrino, C. ; Zhiou, S. ; Benoudia, M.C. ; Texier, M. ; Hoummada, K.</creator><creatorcontrib>Rabhi, S. ; Perrin-Pellegrino, C. ; Zhiou, S. ; Benoudia, M.C. ; Texier, M. ; Hoummada, K.</creatorcontrib><description>In situ X-Ray Diffraction, X-Ray Reflectivity and High Resolution Transmission Electron Microscopy were used to investigate the sequence and the texture of phase formation during the solid-state reaction of Ni thin film with GaAs substrate. These results show the formation of a unique Ni3GaAs crystalline phase at 200°C that remains stable until 400°C. The epitaxial relationships between this phase and the GaAs substrate were also evidenced. The formation of this unique phase, along with the variation of its lattice parameters when Ni is totally consumed, can be explained by local thermodynamic equilibrium and kinetics arguments. [Display omitted]</description><identifier>ISSN: 1359-6462</identifier><identifier>EISSN: 1872-8456</identifier><identifier>DOI: 10.1016/j.scriptamat.2017.07.011</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>Contacts ; Engineering Sciences ; GaAs ; Intermetallic growth ; Micro and nanotechnologies ; Microelectronics ; Reaction ; Self-diffusion ; Thin films</subject><ispartof>Scripta materialia, 2017-12, Vol.141, p.28-31</ispartof><rights>2017 Acta Materialia Inc.</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c352t-7efa84fdef53c07599927e93c3a99ca63f1c42d8f5c1c413af0f05dfaf94af2b3</citedby><cites>FETCH-LOGICAL-c352t-7efa84fdef53c07599927e93c3a99ca63f1c42d8f5c1c413af0f05dfaf94af2b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27903,27904</link.rule.ids><backlink>$$Uhttps://hal.science/hal-01694002$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Rabhi, S.</creatorcontrib><creatorcontrib>Perrin-Pellegrino, C.</creatorcontrib><creatorcontrib>Zhiou, S.</creatorcontrib><creatorcontrib>Benoudia, M.C.</creatorcontrib><creatorcontrib>Texier, M.</creatorcontrib><creatorcontrib>Hoummada, K.</creatorcontrib><title>Phase formation between Ni thin films and GaAs substrate</title><title>Scripta materialia</title><description>In situ X-Ray Diffraction, X-Ray Reflectivity and High Resolution Transmission Electron Microscopy were used to investigate the sequence and the texture of phase formation during the solid-state reaction of Ni thin film with GaAs substrate. These results show the formation of a unique Ni3GaAs crystalline phase at 200°C that remains stable until 400°C. The epitaxial relationships between this phase and the GaAs substrate were also evidenced. The formation of this unique phase, along with the variation of its lattice parameters when Ni is totally consumed, can be explained by local thermodynamic equilibrium and kinetics arguments. [Display omitted]</description><subject>Contacts</subject><subject>Engineering Sciences</subject><subject>GaAs</subject><subject>Intermetallic growth</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><subject>Reaction</subject><subject>Self-diffusion</subject><subject>Thin films</subject><issn>1359-6462</issn><issn>1872-8456</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqFkE9LAzEQxYMoWKvfIVcPu-bPZndzrEVboagHPYdpdkJT2t2SxIrf3iwVPQoPZhjeezA_QihnJWe8vtuW0QZ_SLCHVArGm5JlcX5GJrxtRNFWqj7Pu1S6qKtaXJKrGLeMsZoLPiHt6wYiUjeEnPdDT9eYPhF7-uxp2vieOr_bRwp9RxcwizR-rGMKkPCaXDjYRbz5mVPy_vjwNl8Wq5fF03y2KqxUIhUNOmgr16FT0rJGaa1Fg1paCVpbqKXjthJd65TNC5fgmGOqc-B0BU6s5ZTcnno3sDOH4PcQvswA3ixnKzPeMgRdMSaOPHvbk9eGIcaA7jfAmRlpma35o2VGWoZl8TF6f4pi_uXoMWSjx95i5wPaZLrB_1_yDZhdeEc</recordid><startdate>201712</startdate><enddate>201712</enddate><creator>Rabhi, S.</creator><creator>Perrin-Pellegrino, C.</creator><creator>Zhiou, S.</creator><creator>Benoudia, M.C.</creator><creator>Texier, M.</creator><creator>Hoummada, K.</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope></search><sort><creationdate>201712</creationdate><title>Phase formation between Ni thin films and GaAs substrate</title><author>Rabhi, S. ; Perrin-Pellegrino, C. ; Zhiou, S. ; Benoudia, M.C. ; Texier, M. ; Hoummada, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c352t-7efa84fdef53c07599927e93c3a99ca63f1c42d8f5c1c413af0f05dfaf94af2b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Contacts</topic><topic>Engineering Sciences</topic><topic>GaAs</topic><topic>Intermetallic growth</topic><topic>Micro and nanotechnologies</topic><topic>Microelectronics</topic><topic>Reaction</topic><topic>Self-diffusion</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rabhi, S.</creatorcontrib><creatorcontrib>Perrin-Pellegrino, C.</creatorcontrib><creatorcontrib>Zhiou, S.</creatorcontrib><creatorcontrib>Benoudia, M.C.</creatorcontrib><creatorcontrib>Texier, M.</creatorcontrib><creatorcontrib>Hoummada, K.</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Scripta materialia</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Rabhi, S.</au><au>Perrin-Pellegrino, C.</au><au>Zhiou, S.</au><au>Benoudia, M.C.</au><au>Texier, M.</au><au>Hoummada, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Phase formation between Ni thin films and GaAs substrate</atitle><jtitle>Scripta materialia</jtitle><date>2017-12</date><risdate>2017</risdate><volume>141</volume><spage>28</spage><epage>31</epage><pages>28-31</pages><issn>1359-6462</issn><eissn>1872-8456</eissn><abstract>In situ X-Ray Diffraction, X-Ray Reflectivity and High Resolution Transmission Electron Microscopy were used to investigate the sequence and the texture of phase formation during the solid-state reaction of Ni thin film with GaAs substrate. These results show the formation of a unique Ni3GaAs crystalline phase at 200°C that remains stable until 400°C. The epitaxial relationships between this phase and the GaAs substrate were also evidenced. The formation of this unique phase, along with the variation of its lattice parameters when Ni is totally consumed, can be explained by local thermodynamic equilibrium and kinetics arguments. [Display omitted]</abstract><pub>Elsevier Ltd</pub><doi>10.1016/j.scriptamat.2017.07.011</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1359-6462
ispartof Scripta materialia, 2017-12, Vol.141, p.28-31
issn 1359-6462
1872-8456
language eng
recordid cdi_hal_primary_oai_HAL_hal_01694002v1
source ScienceDirect Journals
subjects Contacts
Engineering Sciences
GaAs
Intermetallic growth
Micro and nanotechnologies
Microelectronics
Reaction
Self-diffusion
Thin films
title Phase formation between Ni thin films and GaAs substrate
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T01%3A04%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-hal_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Phase%20formation%20between%20Ni%20thin%20films%20and%20GaAs%20substrate&rft.jtitle=Scripta%20materialia&rft.au=Rabhi,%20S.&rft.date=2017-12&rft.volume=141&rft.spage=28&rft.epage=31&rft.pages=28-31&rft.issn=1359-6462&rft.eissn=1872-8456&rft_id=info:doi/10.1016/j.scriptamat.2017.07.011&rft_dat=%3Chal_cross%3Eoai_HAL_hal_01694002v1%3C/hal_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c352t-7efa84fdef53c07599927e93c3a99ca63f1c42d8f5c1c413af0f05dfaf94af2b3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true