Effect of annealing time on the performance of tin oxide thin films ultraviolet photodetectors

Tin oxide SnO2 thin films were deposited by sol gel method on glass substrates. The as-deposited thin films were then annealed at 550°C for different time durations (15, 30, 60 and 120min). Structural and morphological investigations were carried out on all samples by X-ray diffraction method and at...

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Bibliographic Details
Published in:Thin solid films 2017-02, Vol.623, p.1-7
Main Authors: Djamil, Rechem, Aicha, Khial, Souifi, Abdelkader, Fayçal, Djeffal
Format: Article
Language:English
Subjects:
Annealing time
Engineering Sciences
Materials
Micro and nanotechnologies
Microelectronics
Optics
Photonic
Physics
Sol-gel method
Thin films
Tin oxide
UV photodetector
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Summary:Tin oxide SnO2 thin films were deposited by sol gel method on glass substrates. The as-deposited thin films were then annealed at 550°C for different time durations (15, 30, 60 and 120min). Structural and morphological investigations were carried out on all samples by X-ray diffraction method and atomic force microscopy while optical properties were obtained with UV–Visible spectrophotometer. XRD patterns reveals that the samples possess polycrystalline with rutile structure of SnO2 without any secondary phase. AFM image showed that SnO2 thin films having a smooth surface morphology. The optical properties in the visible range showed that the deposited layers have a high transmission factor. The optical band gap energy varies in the range of 3.61–3.73eV. Finally, ultraviolet (UV) detection properties of samples as an active layer in UV photodetector devices were investigated. Current-voltage characteristics of the SnO2 thin films are performed under dark and light environment, which show low dark current of 22.9nA with a linear behavior and high current ration>104 under 2V applied voltage and 120min as annealing time. Whereas, high photocurrent is observed for samples annealing for 30min. Moreover, the transient photoresponse of the fabricated device is reported under different annealing times. •The constructed photodetector showed a low linear dark current 22.9nA.•High on/off current ratio for annealing time 120min at a bias of 2V•Samples annealing for 30min a high photocurrent was observed.•Transient photoresponse of the fabricated device is reported under different annealing times.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2016.12.035