Fast Growth Synthesis of GaAs Nanowires with Exceptional Length

• Published in: Nano letters 2010-05, Vol.10 (5), p.1836-1841
• Main Authors: Ramdani, M. R, Gil, E, Leroux, Ch, André, Y, Trassoudaine, A, Castelluci, D, Bideux, L, Monier, G, Robert-Goumet, C, Kupka, R
• Format: Article
• Language: English
• Subjects: Arsenicals - chemical synthesis; Catalytic methods; Condensed Matter; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Crystallization - methods; Equipment Design; Equipment Failure Analysis; Exact sciences and technology; Gallium; Macromolecular Substances - chemistry; Materials Science; Materials Testing; Methods of nanofabrication; Molecular Conformation; Nanocrystalline materials; Nanoscale materials and structures: fabrication and characterization; Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals; Nanostructures - chemistry; Nanostructures - ultrastructure; Nanotechnology - methods; Particle Size; Physics; Quantum wires; Structure of solids and liquids; crystallography; Surface Properties
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/nl100557d

We report the first synthesis of GaAs nanowires (NWs) by Au-assisted vapor−liquid−solid (VLS) growth in the novel hydride vapor phase epitaxy (HVPE) environment. Forty micrometer long rodlike ⟨111⟩ monocrystalline GaAs nanowires exhibiting a cubic zinc blende structure were grown in 15 min with a mean density of 106 cm−2. The synthesis of such long figures in such a short duration could be explained by the growth physics of near-equilibrium HVPE. VLS−HVPE is mainly based on solidification after direct and continuous feeding of the arsenious and GaCl growth precursors through the Au−Ga liquid catalyst. Fast solidification (170 μm/h) is then assisted by the high decomposition frequency of GaCl. This predominant feeding through the liquid−solid interface with no mass and kinetic hindrance favors axial rather than radial growth, leading to twin-free nanowires with a constant cylinder shape over unusual length. The achievement of GaAs NWs several tens of micrometers long showing a high surface to volume ratio may open the field of III−V wires, as already addressed with ultralong Si nanowires.