Interplay between Raman shift and thermal expansion in graphene: Temperature-dependent measurements and analysis of substrate corrections

Measurements and calculations have shown significant disagreement regarding the sign and temperature variations of the thermal expansion coefficient (TEC) of graphene alpha (T). Here we report dedicated Raman scattering experiments conducted for graphene monolayers deposited on silicon nitride subst...

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2015-02, Vol.91 (7), Article 075426
Main Authors: Linas, S., Magnin, Y., Poinsot, B., Boisron, O., Förster, G. D., Martinez, V., Fulcrand, R., Tournus, F., Dupuis, V., Rabilloud, F., Bardotti, L., Han, Z., Kalita, D., Bouchiat, V., Calvo, F.
Format: Article
Language:English
Subjects:
Approximation
Band theory
Condensed Matter
Deposition
Graphene
Mathematical analysis
Mesoscopic Systems and Quantum Hall Effect
Physics
Silicon nitride
Silicon substrates
Thermal expansion
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Summary:Measurements and calculations have shown significant disagreement regarding the sign and temperature variations of the thermal expansion coefficient (TEC) of graphene alpha (T). Here we report dedicated Raman scattering experiments conducted for graphene monolayers deposited on silicon nitride substrates and over a broad temperature range extending over 150-800 K. The relation between those measurements for the G band and the graphene TEC, which involves correcting the measured signal from the mismatch contribution of the substrate, is analyzed based on different theoretical candidates for alpha (T). Contrary to calculations in the quasiharmonic approximation, a many-body potential reparametrized for graphene correctly reproduces experimental data, suggesting that the TEC is more likely to be positive above room temperature.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.91.075426