Effect of H-implantation in the local elastic properties of silicon crystals

In contrast to previous reports, where the modification of elastic constants of semiconductors irradiated with heavy ions was related to crystalline to amorphous transition, here we show that hydrogen implantation causes a dramatic modification of the shear modulus of Si at relatively low levels of...

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Bibliographic Details
Published in:Applied physics letters 2013-10, Vol.103 (18), p.181911
Main Authors: Reboh, S, Rieutord, F, Vignoud, L, Mazen, F, Cherkashin, N, Zussy, M, Landru, D, Deguet, C
Format: Article
Language:English
Subjects:
Applied physics
Crystal structure
Crystallinity
Crystals
Curvature
Elastic properties
Elasticity
Heavy ions
Implantation
Mechanics
Mechanics of materials
Physics
Shear modulus
Silicon
X-ray diffraction
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Summary:In contrast to previous reports, where the modification of elastic constants of semiconductors irradiated with heavy ions was related to crystalline to amorphous transition, here we show that hydrogen implantation causes a dramatic modification of the shear modulus of Si at relatively low levels of crystalline damage. To study the system, we developed an alternative and rather general method to determine the shear modulus of the buried implanted layer. We use elasticity theory to link two simple measurements: (i) the wafer curvature to extract the in-plane stresses and (ii) x-ray diffraction to determine strains in the implanted layer.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4828659