Electrical characteristics of GaIn(As)Sb layers grown by metal organic vapor phase epitaxy

We report the electrical characteristics of GaInSb and GaInAsSb layers grown by metal organic vapor phase epitaxy (MOVPE) on GaSb and GaAs substrates versus the growth parameters as growth temperature and V/III ratio. The effect of initial growth process including GaSb or stepped buffers is also des...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1996-11, Vol.41 (2), p.201-205
Main Authors: Giani, A., Pascal-Delannoy, F., Podlecki, J., Bougnot, G.
Format: Article
Language:English
Subjects:
Antimonide-based compounds
Electronics
Engineering Sciences
Metal organic vapor phase epitaxy
Semiconductors
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Summary:We report the electrical characteristics of GaInSb and GaInAsSb layers grown by metal organic vapor phase epitaxy (MOVPE) on GaSb and GaAs substrates versus the growth parameters as growth temperature and V/III ratio. The effect of initial growth process including GaSb or stepped buffers is also described. On bulk Ga 0.6In 0.4Sb layer grown with a stepped buffer layer, the best carrier density and mobility are 1.4 × 10 16 cm −3 and 454 cm 2 V −1 s −1, respectively. But the lower value (6.4 × 10 15 cm −3) than the previous one was obtained on a p/n structure containing a stepped buffer layer and a growth interruption between p- and n-layers. For the quaternary layer, the best results were obtained for samples grown outside the miscibility gap and close to the lattice matching.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(96)01662-5