Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001)

Structural and morphological characterization of a Si(110) film heteroepitaxied on 3C-SiC(001)/Si(001) on-axis template by chemical vapor deposition has been performed. An antiphase domain (APD) free 3C-SiC layer was used showing a roughness limited to 1 nm. This leads to a smooth Si film with a rou...

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Bibliographic Details
Published in:Applied physics letters 2016-01, Vol.108 (1)
Main Authors: Khazaka, Rami, Grundmann, Marius, Portail, Marc, Vennéguès, Philippe, Zielinski, Marcin, Chassagne, Thierry, Alquier, Daniel, Michaud, Jean-François
Format: Article
Language:English
Subjects:
Antiphase boundaries
Applied physics
Chemical vapor deposition
Engineering Sciences
Film thickness
Micro and nanotechnologies
Microelectronics
Misalignment
Morphology
Organic chemistry
Roughness
Silicon carbide
Silicon films
Structural analysis
Substrates
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Summary:Structural and morphological characterization of a Si(110) film heteroepitaxied on 3C-SiC(001)/Si(001) on-axis template by chemical vapor deposition has been performed. An antiphase domain (APD) free 3C-SiC layer was used showing a roughness limited to 1 nm. This leads to a smooth Si film with a roughness of only 3 nm for a film thickness of 400 nm. The number of rotation domains in the Si(110) epilayer was found to be two on this APD-free 3C-SiC surface. This is attributed to the in-plane azimuthal misalignment of the mirror planes between the two involved materials. We prove that fundamentally no further reduction of the number of domains can be expected for the given substrate. We suggest the necessity to use off-axis substrates to eventually favor a single domain growth.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4939692