Atom probe tomography of nitride semiconductors

Atom probe tomography (APT) has emerged as a valuable tool in the study of nitride semiconductors, despite the challenges involved in achieving controlled field evaporation. In optoelectronics, it has provided insights into the nanostructure of light emitting diodes, laser diodes and microwires. In...

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Published in:Scripta materialia 2018-04, Vol.148, p.75-81
Main Authors: Rigutti, L., Bonef, B., Speck, J., Tang, F., Oliver, R.A.
Format: Article
Language:English
Subjects:
Atom probe tomography
Condensed Matter
Gallium nitride
High electron mobility transistor
Light emitting diode
Materials Science
Microwire
Physics
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description Atom probe tomography (APT) has emerged as a valuable tool in the study of nitride semiconductors, despite the challenges involved in achieving controlled field evaporation. In optoelectronics, it has provided insights into the nanostructure of light emitting diodes, laser diodes and microwires. In electronics, it has allowed insights into impurity doping and alloying effects in transistors. Coupled with direct correlative studies using other techniques and theoretical modelling based on the APT data, the availability of three dimensional compositional information on nitride heterostructures has had (and will continue to have) a profound impact on the design and development of devices. [Display omitted]
doi_str_mv 10.1016/j.scriptamat.2016.12.034
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subjects Atom probe tomography
Condensed Matter
Gallium nitride
High electron mobility transistor
Light emitting diode
Materials Science
Microwire
Physics
title Atom probe tomography of nitride semiconductors
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