Growth of GaInAsSb alloys by MOCVD and characterization of GaInAsSb/GaSb p-n photodiodes

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Published in:Journal of the Electrochemical Society 1988-07, Vol.135 (7), p.1783-1788
Main Authors: BOUGNOT, G, DELANNOY, F, FOUCARAN, A, PASCAL, F, ROUMANILLE, F, GROSSE, P, BOUGNOT, J
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Electronics
Engineering Sciences
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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cited_by cdi_FETCH-LOGICAL-c2032-d0b50b156510d74dcbca46d5f1fdad6c8a3e069a3e1b0aa6e9997d6e148f45483
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container_end_page 1788
container_issue 7
container_start_page 1783
container_title Journal of the Electrochemical Society
container_volume 135
creator BOUGNOT, G
DELANNOY, F
FOUCARAN, A
PASCAL, F
ROUMANILLE, F
GROSSE, P
BOUGNOT, J
description
doi_str_mv 10.1149/1.2096130
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fullrecord <record><control><sourceid>hal_cross</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_01787490v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_HAL_hal_01787490v1</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2032-d0b50b156510d74dcbca46d5f1fdad6c8a3e069a3e1b0aa6e9997d6e148f45483</originalsourceid><addsrcrecordid>eNpNkEtLw0AUhQdRsFYX_oNZuHGRdm4yecyyVE0LlS584G64mQeJxEyYCUr99aa0qJt7uZfzHQ6HkGtgMwAu5jCLmcggYSdkAoKnUQ4Ap2TCGCQRz1I4JxchvI8nFDyfkLfSu6-hps7SEtfdIjxVFNvW7QKtdvRxu3y9o9hpqmr0qAbjm28cGtf9B-YljlQfdbSv3eB047QJl-TMYhvM1XFPycvD_fNyFW225Xq52EQqZkkcaValrIJ0TMZ0zrWqFPJMpxasRp2pAhPDMjFOqBhiZoQQuc4M8MLylBfJlNwefGtsZe-bD_Q76bCRq8VG7n8M8iLngn3Cn1Z5F4I39hcAJvf1SZDH-kbtzUHbY1DYWo-dasIvkMd8tI2TH3EBbGc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Growth of GaInAsSb alloys by MOCVD and characterization of GaInAsSb/GaSb p-n photodiodes</title><source>Institute of Physics</source><creator>BOUGNOT, G ; DELANNOY, F ; FOUCARAN, A ; PASCAL, F ; ROUMANILLE, F ; GROSSE, P ; BOUGNOT, J</creator><creatorcontrib>BOUGNOT, G ; DELANNOY, F ; FOUCARAN, A ; PASCAL, F ; ROUMANILLE, F ; GROSSE, P ; BOUGNOT, J</creatorcontrib><identifier>ISSN: 0013-4651</identifier><identifier>EISSN: 1945-7111</identifier><identifier>DOI: 10.1149/1.2096130</identifier><identifier>CODEN: JESOAN</identifier><language>eng</language><publisher>Pennington, NJ: Electrochemical Society</publisher><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Cross-disciplinary physics: materials science; rheology ; Electronics ; Engineering Sciences ; Exact sciences and technology ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics</subject><ispartof>Journal of the Electrochemical Society, 1988-07, Vol.135 (7), p.1783-1788</ispartof><rights>1989 INIST-CNRS</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2032-d0b50b156510d74dcbca46d5f1fdad6c8a3e069a3e1b0aa6e9997d6e148f45483</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=7247872$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.science/hal-01787490$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>BOUGNOT, G</creatorcontrib><creatorcontrib>DELANNOY, F</creatorcontrib><creatorcontrib>FOUCARAN, A</creatorcontrib><creatorcontrib>PASCAL, F</creatorcontrib><creatorcontrib>ROUMANILLE, F</creatorcontrib><creatorcontrib>GROSSE, P</creatorcontrib><creatorcontrib>BOUGNOT, J</creatorcontrib><title>Growth of GaInAsSb alloys by MOCVD and characterization of GaInAsSb/GaSb p-n photodiodes</title><title>Journal of the Electrochemical Society</title><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electronics</subject><subject>Engineering Sciences</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><issn>0013-4651</issn><issn>1945-7111</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNpNkEtLw0AUhQdRsFYX_oNZuHGRdm4yecyyVE0LlS584G64mQeJxEyYCUr99aa0qJt7uZfzHQ6HkGtgMwAu5jCLmcggYSdkAoKnUQ4Ap2TCGCQRz1I4JxchvI8nFDyfkLfSu6-hps7SEtfdIjxVFNvW7QKtdvRxu3y9o9hpqmr0qAbjm28cGtf9B-YljlQfdbSv3eB047QJl-TMYhvM1XFPycvD_fNyFW225Xq52EQqZkkcaValrIJ0TMZ0zrWqFPJMpxasRp2pAhPDMjFOqBhiZoQQuc4M8MLylBfJlNwefGtsZe-bD_Q76bCRq8VG7n8M8iLngn3Cn1Z5F4I39hcAJvf1SZDH-kbtzUHbY1DYWo-dasIvkMd8tI2TH3EBbGc</recordid><startdate>19880701</startdate><enddate>19880701</enddate><creator>BOUGNOT, G</creator><creator>DELANNOY, F</creator><creator>FOUCARAN, A</creator><creator>PASCAL, F</creator><creator>ROUMANILLE, F</creator><creator>GROSSE, P</creator><creator>BOUGNOT, J</creator><general>Electrochemical Society</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope></search><sort><creationdate>19880701</creationdate><title>Growth of GaInAsSb alloys by MOCVD and characterization of GaInAsSb/GaSb p-n photodiodes</title><author>BOUGNOT, G ; DELANNOY, F ; FOUCARAN, A ; PASCAL, F ; ROUMANILLE, F ; GROSSE, P ; BOUGNOT, J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2032-d0b50b156510d74dcbca46d5f1fdad6c8a3e069a3e1b0aa6e9997d6e148f45483</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electronics</topic><topic>Engineering Sciences</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>BOUGNOT, G</creatorcontrib><creatorcontrib>DELANNOY, F</creatorcontrib><creatorcontrib>FOUCARAN, A</creatorcontrib><creatorcontrib>PASCAL, F</creatorcontrib><creatorcontrib>ROUMANILLE, F</creatorcontrib><creatorcontrib>GROSSE, P</creatorcontrib><creatorcontrib>BOUGNOT, J</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>BOUGNOT, G</au><au>DELANNOY, F</au><au>FOUCARAN, A</au><au>PASCAL, F</au><au>ROUMANILLE, F</au><au>GROSSE, P</au><au>BOUGNOT, J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of GaInAsSb alloys by MOCVD and characterization of GaInAsSb/GaSb p-n photodiodes</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>1988-07-01</date><risdate>1988</risdate><volume>135</volume><issue>7</issue><spage>1783</spage><epage>1788</epage><pages>1783-1788</pages><issn>0013-4651</issn><eissn>1945-7111</eissn><coden>JESOAN</coden><cop>Pennington, NJ</cop><pub>Electrochemical Society</pub><doi>10.1149/1.2096130</doi><tpages>6</tpages></addata></record>
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ispartof Journal of the Electrochemical Society, 1988-07, Vol.135 (7), p.1783-1788
issn 0013-4651
1945-7111
language eng
recordid cdi_hal_primary_oai_HAL_hal_01787490v1
source Institute of Physics
subjects Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Electronics
Engineering Sciences
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
title Growth of GaInAsSb alloys by MOCVD and characterization of GaInAsSb/GaSb p-n photodiodes
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-15T10%3A20%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-hal_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth%20of%20GaInAsSb%20alloys%20by%20MOCVD%20and%20characterization%20of%20GaInAsSb/GaSb%20p-n%20photodiodes&rft.jtitle=Journal%20of%20the%20Electrochemical%20Society&rft.au=BOUGNOT,%20G&rft.date=1988-07-01&rft.volume=135&rft.issue=7&rft.spage=1783&rft.epage=1788&rft.pages=1783-1788&rft.issn=0013-4651&rft.eissn=1945-7111&rft.coden=JESOAN&rft_id=info:doi/10.1149/1.2096130&rft_dat=%3Chal_cross%3Eoai_HAL_hal_01787490v1%3C/hal_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c2032-d0b50b156510d74dcbca46d5f1fdad6c8a3e069a3e1b0aa6e9997d6e148f45483%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true