A new approach for AFM cantilever elaboration with 3C-SiC

• Published in: Materials letters 2012-06, Vol.77, p.54-56
• Main Authors: Jiao, S., Michaud, J.F., Portail, M., Madouri, A., Chassagne, T., Zielinski, M., Alquier, D.
• Format: Article
• Language: English
• Subjects: 3C-SiC; AFM; atomic force microscopy; Cantilever; Engineering Sciences; LPCVD; Micro and nanotechnologies; Microelectronics; nickel; Plasma etching; silicon; Tip
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/j.matlet.2012.02.128

The recent achievement of a continuous silicon monocrystalline thin film on 3C-SiC epilayers deposited on silicon substrates has opened the field for new microstructures. In this work, this original hetero-structure is the basis for the elaboration of an entire cantilever for atomic force microscopy. The hetero-epitaxially grown silicon layer is used to define the tip of the cantilever fabricated from the 3C-SiC epilayer deposited on silicon. The complete cantilever is elaborated by plasma etching using a nickel mask. The use of a full dry etching process is very promising as it is independent of the crystalline orientation of the silicon epilayer contrary to process based on wet etching solutions. Moreover, based on such hetero-structure, new MEMS devices can be considered. ► We propose a new approach to elaborate a complete AFM probe. ► Monocrystalline silicon tips on 3C-SiC cantilevers. ► The tip is very sharp, resulting from the well controlled ICP plasma etching. ► Process perfectly adapted whatever the crystalline orientation of the layers. ► The Si tip can be tuned according to the targeted AFM mode.