SiOCH thin films deposited by chemical vapor deposition: From low-κ to chemical and biochemical sensors

• Published in: Microelectronic engineering 2017-01, Vol.167, p.69-79
• Main Authors: Jousseaume, V., El Sabahy, J., Yeromonahos, C., Castellan, G., Bouamrani, A., Ricoul, F.
• Format: Article
• Language: English
• Subjects: Biological Physics; Chemical Physics; Chemical Sciences; Computer Science; Material chemistry; Modeling and Simulation; or physical chemistry; Organosilicate glass; PECVD; Physics; Porosity; Theoretical and; UV curing
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2016.10.003

Significant advances have been made in the realization of porous SiOCH by chemical vapor deposition processes. In this paper, the different approaches developed to introduce porosity in an organosilicate thin films are described with a specific focus on the new concepts to obtain highly porous SiOCH by CVD and to simplify the existing processes. A second part of the paper is dedicated to the application of these porous SiOCH thin films in nanotechnologies: from low-κ dielectrics to chemical and biochemical sensors. •Different approaches to deposit porous SiOCH thin films by CVD are described.•For low-κ applications, Si-CHx-Si bonds can be introduced in order to improve the mechanical properties and resistance to plasma-induced damage.•Highly porous SiOCH can be obtained by using a foaming technique.•A simple process using UV curing of a dense SiOCH leads to porous thin films.•These porous materials are promising as sensitive layer in chemical and biochemical sensors.