Fabrication and electrical characterization of homo- and hetero-structure Si/SiGe nanowire Tunnel Field Effect Transistor grown by vapor–liquid–solid mechanism

• Published in: Solid-state electronics 2016-04, Vol.118, p.26-29
• Main Authors: Brouzet, V., Salem, B., Periwal, P., Alcotte, R., Chouchane, F., Bassani, F., Baron, T., Ghibaudo, G.
• Format: Article
• Language: English
• Subjects: Chemical vapor deposition; Devices; Electrical characterization; Electrical properties; Heterostructure Si/SiGe; Heterostructures; Mathematical models; Nanowire; Nanowires; Physics; Silicon; Silicon germanides; Tunnel Field Effect Transistors; Vapor–liquid–solid mechanism
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2016.01.005

•Ω-gate TFETs based on p-Si/i-Si/n+-Si0.7Ge0.3 NWs heterostructure grown by CVD–VLS.•Ge insertion allows improving the electrical performances of TFET.•The Si/SiGe TFET presents a better electrical performance than the Si TFET device.•The B2BT model’s parameters have been extracted for the Si0.7Ge0.3 nanowires. We demonstrate the fabrication and electrical characterization of Ω-gate Tunnel Field Effect Transistors (TFET) based on p-Si/i-Si/n+Si0.7Ge0.3 heterostructure nanowires grown by Chemical Vapor Deposition (CVD) using the vapor–liquid–solid (VLS) mechanism. The electrical performances of the p-Si/i-Si/n+Si0.7Ge0.3 heterostructure TFET device are presented and compared to Si and Si0.7Ge0.3 homostructure nanowire TFETs. We observe an improvement of the electrical performances of TFET with p-Si/i-Si/n+Si0.7Ge0.3 heterostructure nanowire (HT NW). The optimized devices present an Ion current of about 245nA at VDS=−0.5V and VGS=−3V with a subthreshold swing around 135mV/dec. Finally, we show that the electrical results are in good agreement with numerical simulation using Kane’s Band-to-Band Tunneling model.