Characterization and comparison between Ig(Vgs) structures HEMT AlInN/GaN and AlGaN/GaN

In this paper, we have studied the Schottky contact of two structures AlInN/GaN and AlGaN/GaN in transistors HEMTs. The current–voltage Igs(Vgs) of AlInN/GaN and AlGaN/GaN structures were investigated at room temperature. The electrical parameters such as ideality factor (2.3 and 1.96), barrier heig...

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Bibliographic Details
Published in:Optical and quantum electronics 2014, Vol.46 (1), p.209-219
Main Authors: Benyahya, N., Mazari, H., Benseddik, N., Benamara, Z., Mostefaoui, M., Ameur, K., Khelifi, R., Bluet, J. M., Chikhaoui, W., Bru-Chevallier, C.
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Characterization and Evaluation of Materials
Computer Communication Networks
Contact
Electric contacts
Electrical Engineering
Engineering Sciences
Gallium nitrides
High electron mobility transistors
Lasers
Micro and nanotechnologies
Microelectronics
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
Quantum electronics
Semiconductor devices
Transistors
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Summary:In this paper, we have studied the Schottky contact of two structures AlInN/GaN and AlGaN/GaN in transistors HEMTs. The current–voltage Igs(Vgs) of AlInN/GaN and AlGaN/GaN structures were investigated at room temperature. The electrical parameters such as ideality factor (2.3 and 1.96), barrier height (0.72 and 0.71 eV) and series resistance (33 and 153 Ω ) were evaluated from I–V data. The comparison of the performance of the two structures AlInN/GaN and AlGaN/GaN in transistors HEMTs have been analyzed and discussed.
ISSN:0306-8919
1572-817X
DOI:10.1007/s11082-013-9747-4