UV photoreflectance spectroscopy in strained silicon on insulator structures

• Published in: Physica status solidi. A, Applications and materials science Applications and materials science, 2009-05, Vol.206 (5), p.821-825
• Main Authors: Munguía, Jacobo, Bluet, Jean-Marie, Chouaib, Houssam, Bremond, Georges, Bru-Chevallier, Catherine
• Format: Article
• Language: English
• Subjects: 71.70.Fk; 78.20.Ci; 78.30.Am; 78.40.Fy; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Engineering Sciences; Exact sciences and technology; Micro and nanotechnologies; Microelectronics; Multilayers, superlattices; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; Physics
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.200881404

The optical modulation technique of photoreflectance (PR) is applied on tensely‐strained silicon on insulator (sSOI) substrates in order to determine the deformation potential in the strained silicon direct band gap. Raman spectroscopy is used for strain determination. A redshift of the Si direct band gap transition is observed as the strain induced in the layer is increased. We report a band gap shrinkage at Γ‐point down to 60 ± 6 meV, 120 ± 15 meV and 127 ± 13 meV for 0.77 ± 0.02%, 1.22 ± 0.02% and 1.40 ± 0.03% of strain, respectively. The obtained deformation potential in the direct band gap (a = –0.55 eV and b = –2.45 eV) are in good agreement with previously reported results for bulk material. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)